Datasheet > NDUL03N150C

NDUL03N150C

更新时间： 2024-09-14 01:20:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	261K
描述
N-Channel Power MOSFET

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NDUL03N150C 数据手册

Ordering number : ENA2218

NDUL03N150C

N-Channel Power MOSFET

http://onsemi.com

1500V, 2.5A, 10.5 , TO-3PF-3L

Features

•

ON-resistance R (on)=8 (typ.)

Input capacitance Ciss=650pF (typ.)

10V drive

•

TO-3PF-3L

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

1500

±30

2.5

DSS

GSS

Limited only maximum temperature Tch

150

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

3.0

Allowable Power Dissipation

Tc=25 C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

2.5

Note : 1 V =50V, L=10mH, I =2.5A (Fig.1)

2 L 10mH, single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

=10mA, V =0V

Unit

min

1500

max

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

(BR)DSS

=1200V, V =0V

DSS

=±30V, V =0V

±100

GSS

(off)

=10V, I =1mA

Forward Transfer Admittance

Static Drain to Source On-State Resistance

Input Capacitance

| yfs |

(on)

=20V, I =1.25A

1.9

=1.25A, V =10V

D GS

650

10.5

Ciss

Output Capacitance

Coss

Crss

=30V, f=1MHz

Reverse Transfer Capacitance

Turn-ON Delay Time

(on)

Rise Time

See Fig.2

Turn-OFF Delay Time

(off)

140

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Qgs

Qgd

=200V, V =10V, I =2.5A

4.7

I =2.5A, V =0V

0.8

350

2220

1.5

See Fig.3

I =2.5A, V =0V, di/dt=100A/

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of this data sheet.

Semiconductor Components Industries, LLC, 2013

September, 2013

92513 TKIM TC-00003021/ No. A2218-1/5

12 3 4 5

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