Datasheet > NDUL09N150C

NDUL09N150C

更新时间： 2024-09-14 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	513K
描述
Single NâChannel Power MOSFET

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NDUL09N150C 数据手册

NDUL09N150C

Power MOSFET

www.onsemi.com

1500V, 3.0Ω, 9A, N-Channel

Features

 Low On-Resistance

 Ultra High Voltage

Electrical Connection

 High Speed Switching

 100% Avalanche Tested

N-Channel

 Pb-Free and RoHS Compliance

Specifications

Absolute Maximum Ratings at Ta = 25C

Parameter

Drain to Source Voltage

Symbol

Value

1500

Unit

DSS

Gate to Source Voltage

±30

GSS

Drain Current (DC)

Drain Current (DC) Limited by Package

Drain Current (Pulse)

PW  10s, duty cycle  1%

Marking

3.0

Power Dissipation

C

Tc=25C

Junction Temperature

Storage Temperature

150

55 to

Tstg

+150

Source Current (Body Diode)

Avalanche Energy (Single Pulse) *¹

197

Lead Temperature for Soldering

260

C

Purposes, 3 mm from case for 10 seconds

Thermal Resistance Ratings

Parameter

Junction to Case Steady State

Junction to Ambient *²

Symbol

Value

Unit

1.60

41.7

JC

C/W

JA

Note : *¹V

=50V, L=10mH, I =6A (Fig.1)

*²Insertion mounted

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

February 2015 - Rev. 1

Publication Order Number :

NDUL09N150C/D

12 3 4 5

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