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NDT4N70 PDF预览

NDT4N70

更新时间: 2024-11-06 18:09:35
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 1349K
描述
N-Channel MOSFET

NDT4N70 数据手册

 浏览型号NDT4N70的Datasheet PDF文件第2页浏览型号NDT4N70的Datasheet PDF文件第3页 
SMD Type  
MOSFET  
N-Channel Enhancement MOSFET  
NDT4N70  
TO-252  
Unit: mm  
Features  
0.15  
6.50+-  
5.30+-  
0.15  
0.1  
0.1  
2.30+-  
+0.8  
-0.7  
0.2  
0.2  
0.50  
VDS (V) = 700V  
ID = 4.2 A (VGS = 10V)  
RDS(ON) 2.15Ω (VGS = 10V)  
2.Drain  
0.127  
max  
+0.1  
-0.1  
0.80  
+0.1  
-0.1  
0.60  
2.3  
4.60  
1.Gate  
1Gate  
+0.15  
-0.15  
2Drain  
3Source  
3.Source  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
700  
±30  
4.2  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
Continuous Drain Current  
ID  
A
Pulsed Drain Current (Note1)  
Avalanche Current (Note1)  
I
DM  
AR  
17.6  
4.2  
I
Repetitive Pulse Avalanche Energy (Note1)  
Single Pulse Avalanche Energy (Note2)  
Peak Diode Recovery dv/dt (Note3)  
Power Dissipation  
E
AR  
AS  
10.6  
260  
4.5  
mJ  
mJ  
E
dv/dt  
V/ns  
W
P
D
49  
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
R
thJA  
thJC  
110  
2.55  
150  
/W  
R
T
J
Operating Temperature  
T
opr  
-55 to 150  
-55 to 150  
Storage Temperature Range  
Tstg  
Note.1 Repetitive Rating : Pulse width limited by maximum junction temperature  
Note.2 L=26.9mH, IAS=4.2A, VDD=50V, R =25Ω, Starting T =25°C  
Note.3 SD 4.2A, di/dt200A/us, VDDBVdss, Starting T =25°C  
g
J
I
J
1
www.kexin.com.cn  

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