Datasheet > NDT4N70

NDT4N70

更新时间： 2024-11-19 18:09:35

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科信 - KEXIN		/
页数	文件大小	规格书
3页	1349K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT4N70 数据手册

SMD Type

MOSFET

N-Channel Enhancement MOSFET

NDT4N70

TO-252

Unit: mm

■ Features

0.15

6.50⁺_-

5.30⁺_-

0.15

0.1

2.30⁺_-

+0.8

-0.7

0.2

0.50

● VDS (V) = 700V

● ID = 4.2 A (VGS = 10V)

● RDS(ON) ＜ 2.15Ω (VGS = 10V)

2.Drain

0.127

max

+0.1

-0.1

0.80

+0.1

-0.1

0.60

2.3

4.60

1.Gate

1Gate

+0.15

-0.15

2Drain

3Source

3.Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

700

±30

4.2

Unit

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note1)

Avalanche Current (Note1)

17.6

4.2

Repetitive Pulse Avalanche Energy (Note1)

Single Pulse Avalanche Energy (Note2)

Peak Diode Recovery dv/dt (Note3)

Power Dissipation

10.6

260

4.5

dv/dt

V/ns

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

110

2.55

150

℃/W

Operating Temperature

opr

-55 to 150

℃

Storage Temperature Range

Tstg

Note.1 Repetitive Rating : Pulse width limited by maximum junction temperature

Note.2 L=26.9mH, IAS=4.2A, VDD=50V, R =25Ω, Starting T =25°C

Note.3 SD ≤4.2A, di/dt≤200A/us, VDD≤BVdss, Starting T =25°C

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