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NDT7N70 PDF预览

NDT7N70

更新时间: 2024-11-21 18:09:43
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 164K
描述
N-Channel MOSFET

NDT7N70 数据手册

 浏览型号NDT7N70的Datasheet PDF文件第2页浏览型号NDT7N70的Datasheet PDF文件第3页浏览型号NDT7N70的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
N-Channel MOSFET  
NDT7N70  
TO-252  
Unit: mm  
Ƶ Features  
ƽ VDS (V) = 700V  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
-0.2  
5.30  
0.50  
ƽ ID = 7A  
4
ƽ RDS(ON) < 1.2@ VGS = 10V,I  
ƽ Fast switching capability  
D = 3.5A  
0.127  
max  
+0.1  
-0.1  
0.80  
ƽ Avalanche energy specified  
ƽ Improved dv/dt capability, high ruggedness  
1 Gate  
2 Drain  
0.1  
0.1  
0.60+-  
2.3  
4.60  
+0.15  
-0.15  
3 Source  
4 Drain  
Ƶ Absolute Maximum Ratings (T  
C
= 25ć, unless otherwise specified)  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
700  
30  
Unit  
VDS  
GS  
V
Gate-Source Voltage  
V
7.0  
T
C
C
= 25ć  
Continuous Drain Current  
ID  
A
4.7  
T
= 100ć  
Pulsed Drain Current (Note 2)  
IDM  
28  
Avalanche Energy, Single Pulsed (Note 3)  
Avalanche Energy, Repetitive, Limited by TJMAX  
Peak Diode Recovery dv/dt (Note 4)  
Power Dissipation  
E
AS  
AR  
40  
mJ  
E
14.2  
4.5  
dv/dt  
V/ns  
W
P
D
60  
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
R
thJA  
thJC  
110  
2.08  
150  
ć/W  
R
T
J
ć
Storage Temperature Range  
T
stg  
-55 to 150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by TJ  
3. L=20mH, IAS=2A, VDD=50V, RG=0 Ÿ, Starting TJ=25°C  
4. ISD ” 7.0A, di/dt ”100A/ȝs, VDD ” BVDSS, Starting TJ=25°C  
1
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