Datasheet > NDT5N70P

NDT5N70P

更新时间： 2024-11-21 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	2590K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT5N70P 数据手册

DIP Type

MOSFET

N-Channel Enhancement MOSFET

NDT5N70P

TO-251

■ Features

● VDS (V) = 700V

● ID = 5.0 A (VGS = 10V)

2 3

● RDS(ON) ＜ 1.8Ω (VGS = 10V)

● High Current, High Speed Switching

Unit: mm

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

700

±30

5.0

Unit

Gate-Source Voltage

Tc=25℃

Continuous Drain Current

3.15

Tc=100℃

Pulsed Drain Current (Note1)

IDM

Repetitive Pulse Avalanche Energy (Note2)

Single Pulse Avalanche Energy (Note2)

Peak Diode Recovery dv/dt (Note3)

11.2

186

4.5

dv/dt

V/ns

112

0.89

110

1.12

150

Tc=25℃

Power Dissipation

Derate above 25℃

W/℃

Thermal Resistance.Junction- to-Ambient (Note1)

Thermal Resistance.Junction- to-Case (Note1)

Junction Temperature

thJA

thJC

℃/W

℃

Storage Temperature Range

Tstg

-55 to 150

Note.1 Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C

Note.2 L=13.8mH, IAS=5.0A, VDD=50V, R =25Ω, Starting T =25°C

Note.3 SD ≤5.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω,Starting T

J=25°C

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