Datasheet > NDT6N65P

NDT6N65P

更新时间： 2024-11-21 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	3425K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT6N65P 数据手册

DIP Type

MOSFET

N-Channel Enhancement MOSFET

NDT6N65P

TO-251

■ Features

● VDS (V) = 650V

2 3

● ID = 4.8A (VGS = 10V)

● RDS(ON) ＜ 1.8Ω (VGS = 10V)

● Low gate charge ( typical 16nC)

Unit: mm

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

650

±30

4.8

Unit

Drain-Source Voltage

Gate-Source Voltage

Tc=25℃

Tc=100℃

Continuous Drain Current

3.0

Pulsed Drain Current

Avalanche Current

(Note.1)

IDM

4.8

Repetitive Avalanche Energy (Note.1)

9.5

Single Pulsed Avalanche Energy (Note.2)

150

Tc=25℃

Derate above 25℃

(Note.3)

Power Dissipation

0.76

4.5

W/℃

Peak Diode Recovery dv/dt

dv/dt

V/ns

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Thermal Resistance.Case-to-Sink Typ

RthJA

RthJC

RthJS

110

1.3

℃/W

Maximum lead Temperature for soldering purpose,

1/8 from case for 5 seconds

300

℃

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature

Note.2: L=8mH,IAS=6.0A,VDD=50V,R =25Ω,Starting T =25℃

Note.3; ISD≤4.8A,di/dt≤200A/us,VDD≤BVDSS,Starting T =25℃

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