Datasheet > NDT8N20

NDT8N20

更新时间： 2024-11-19 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	519K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT8N20 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

NDT8N20

TO-252

Unit: mm

■ Features

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.08

-0.07

+0.2

5.30

-0.2

● VDS =200V,I

=8A

0.50

● R^DS(ON)<300mΩ @ VGS=10V（Typ：260mΩ）

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Low gate to drain charge to reduce switching losses

0.127

max

+0.1

-0.1

0.80

1 Gate

2 Drain

0.1

0.60⁺_-

2.3

4.60

+0.15

-0.15

3 Source

4 Drain

■ Absolute Maximum Ratings (T

= 25℃, unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

Rating

200

Unit

VDS

Gate-Source Voltage

±20

= 25℃

Continuous Drain Current

5.6

= 100℃

Pulsed Drain Current

Power Dissipation

Thermal Resistance.Junction- to-Case (Note 2)

Junction Temperature

thJC

2.3

℃/W

150

℃

Storage Temperature Range

stg

-55 to 150

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