Datasheet > NDT6N60P

NDT6N60P

更新时间： 2024-11-19 18:09:31

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科信 - KEXIN		/
页数	文件大小	规格书
3页	1328K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT6N60P 数据手册

DIP Type

MOSFET

N-Channel MOSFET

NDT6N60P

TO-251

■ Features

● VDS (V) = 600V

2 3

● ID = 6.2 A (VGS = 10V)

● R^DS(ON)＜ 1.5Ω (VGS = 10V)

● Fast switching capability

● Low reverse transfer Capacitance

Drain

Unit: mm

Gate

Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Avalanche Current

Symbol

Rating

Unit

600

±30

6.2

24.8

6.2

Power Dissipation

Single Pulsed (Note 1)

440

Avalanche Energy

Repetitive

(Note.2)

Peak Diode Recovery dv/dt

dv/dt

4.5

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

110

2.27

150

℃/W

℃

Storage Temperature Range

stg

-55 to 150

Note.1: L = 14mH, I^AS= 6A, VDD = 90V, R

= 25 Ω, Starting T

= 25°C

Note.2: I^SD≤ 6.2A, di/dt ≤200A/us, VDD ≤ BVDSS, Starting T

J = 25°C

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