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NDT8P06 PDF预览

NDT8P06

更新时间: 2024-11-19 18:09:11
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 124K
描述
P-Channel MOSFET

NDT8P06 数据手册

 浏览型号NDT8P06的Datasheet PDF文件第2页浏览型号NDT8P06的Datasheet PDF文件第3页浏览型号NDT8P06的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
P-Channel MOSFET  
NDT8P06  
TO-252  
Unit: mm  
Ƶ Features  
ƽ VDS (V) =-60V  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
-0.2  
5.30  
0.50  
ƽ I  
ƽ I  
D
D
=-8.4 A (VGS =-10V)  
=-7.4 A (VGS =-4.5V)  
4
ƽ RDS(ON) ˘ 0.155ȍ (VGS =-10V)  
ƽ RDS(ON) ˘ 0.28ȍ (VGS =-4.5V)  
0.127  
max  
+0.1  
-0.1  
0.80  
S
1 Gate  
2 Drain  
0.1  
0.1  
0.60+-  
2.3  
4.60  
+0.15  
-0.15  
3 Source  
4 Drain  
G
D
Ƶ Absolute Maximum Ratings (T = 25°C, unless otherwise noted)  
C
Parameter  
Symbol  
Rating  
-60  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
GS  
V
20  
T
T
C
C
= 25 °C  
-8.2  
-5.2  
-18  
Continuous Drain Current  
Pulsed Drain Current  
ID  
= 100 °C  
A
I
DM  
Continuing Source Current (Diode Conduction)  
Avalanche Current  
I
S
-8.4  
-12  
I
AS  
AS  
Single Pulse Avalanche Energy  
Power Dissipation  
L = 0.1 mH  
E
7.2  
20.8a  
1.7b  
mJ  
W
T
T
C
A
= 25 °C  
= 25 °C  
P
D
25  
t İ 10 s  
Thermal Resistance.Junction- to-Ambient  
R
thJA  
thJC  
Steady State  
75  
6
ć/W  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
R
T
J
150  
ć
Storage Temperature Range  
T
stg  
-55 to 150  
Notes:  
a. See SOA curve for voltage derating.  
b. Surface mounted on 1" x 1" FR-4 boad.  
1
www.kexin.com.cn  

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