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NDTL03N150C_16 PDF预览

NDTL03N150C_16

更新时间: 2024-11-22 01:12:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 423K
描述
Power MOSFET

NDTL03N150C_16 数据手册

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NDTL03N150C  
Power MOSFET  
1500V, 10.5, 2.5A, N-Channel  
Features  
www.onsemi.com  
Low On-Resistance  
Ultra High Voltage  
High Speed Switching  
100% Avalanche Tested  
Pb-Free and RoHS compliance  
V
R
(on) Max  
I
DSS  
DS  
10.5@10V  
D Max  
2.5A  
1500V  
Typical Applications  
Switch mode power supply  
AC Drive  
ELECTRICAL CONNECTION  
N-Channel  
2
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1, 2, 3, 4)  
Parameter  
Symbol  
Value  
Unit  
V
1 : Gate  
2 : Drain  
3 : Source  
Drain to Source Voltage  
V
1500  
1
DSS  
GSS  
Gate to Source Voltage  
V
30  
V
Drain Current (DC)  
I
2.5  
A
D
Drain Current (Pulse)  
PW10μs, duty cycle1%  
3
A
I
5
DP  
2.5  
P
Power Dissipation  
W
D
140  
150  
MARKING  
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
°C  
°C  
mJ  
A
Tstg  
55 to +150  
34  
Avalanche Energy (Single Pulse) (Note 2)  
Avalanche Current (Note 3)  
E
AS  
03N150  
I
2.5  
AV  
LOT No.  
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
Note 2 : V =50V, L=10mH, I =2.5A (Fig.1)  
DD AV  
Note 3 : L10mH, Single Pulse  
1
TO-3P-3L  
2
3
THERMAL RESISTANCE RATINGS  
Parameter  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
Symbol  
Value  
Unit  
Junction to Case Steady State  
R
0.89  
50.0  
θJC  
°C/W  
Junction to Ambient (Note 4)  
Note 4 : Insertion mounted  
R
θJA  
© Semiconductor Components Industries, LLC, 2016  
March 2016 - Rev. 2  
1
Publication Order Number :  
NDTL03N150C/D  

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