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NCP5351

更新时间: 2024-11-11 22:50:59
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器
页数 文件大小 规格书
14页 188K
描述
4 A Synchronous Buck Power MOSFET Driver

NCP5351 数据手册

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NCP5351  
4 A Synchronous Buck  
Power MOSFET Driver  
The NCP5351 is a dual MOSFET gate driver optimized to drive the  
gates of both high−side and low−side Power MOSFETs in a  
Synchronous Buck converter. The NCP5351 is an excellent  
companion to multiphase controllers that do not have integrated gate  
drivers, such as ON Semiconductor’s CS5323, CS5305 or CS5307.  
This architecture provides a power supply designer the flexibility to  
locate the gate drivers close to the MOSFETs.  
The 4.0 A drive capability makes the NCP5351 ideal for minimizing  
switching losses in MOSFETs with large input capacitance. Optimized  
internal, adaptive nonoverlap circuitry further reduces switching  
losses by preventing simultaneous conduction of both MOSFETs.  
The floating top driver design can accommodate MOSFET drain  
voltages as high as 25 V. Both gate outputs can be driven low, and  
supply current reduced to less than 25 mA, by applying a low logic  
level to the Enable (EN) pin. An undervoltage lockout function  
ensures that both driver outputs are low when the supply voltage is  
low, and a thermal shutdown function provides the IC with  
overtemperature protection.  
http://onsemi.com  
MARKING  
DIAGRAMS  
8
SO−8  
D SUFFIX  
CASE 751  
5351  
ALYW  
8
1
1
10  
QFN−10  
5351  
ALYW  
1
MN SUFFIX  
CASE 485C  
1
The NCP5351 is pin−to−pin compatible with the SC1205 and is  
available in a standard SO−8 package and thermally enhanced  
QFN−10.  
A
L
= Assembly Location  
= Wafer Lot  
Y
W
= Year  
= Work Week  
Features  
4.0 A Peak Drive Current  
Rise and Fall Times < 15 ns Typical into 6000 pF  
Propagation Delay from Inputs to Outputs < 20 ns  
Adaptive Nonoverlap Time Optimized for Large Power MOSFETs  
Floating Top Driver Accommodates Applications Up to 25 V  
PIN CONNECTIONS  
SO−8  
1
8
DRN  
TG  
PGND  
BG  
Undervoltage Lockout to Prevent Switching when the Input  
Voltage is Low  
BST  
CO  
V
S
EN  
Thermal Shutdown Protection Against Overtemperature  
QFN−10  
< 1.0 mA Quiescent Current − Enabled  
25 mA Quiescent Current − Disabled  
Internal TG to DRN Pulldown Resistor Prevents HV Supply−Induced  
Turn On of High−Side MOSFET  
1
DRN  
10  
GND  
BG  
TG  
N/C  
BST  
CO  
N/C  
V
S
EN  
ORDERING INFORMATION  
Device  
Package  
SO−8  
Shipping  
98 Units/Rail  
NCP5351D  
2500 Tape & Reel  
2500 Tape & Reel  
NCP5351DR2  
SO−8  
NCP5351MNR2 QFN−10  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 9  
NCP5351/D  

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