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NCP5355PDR2

更新时间： 2024-11-11 22:18:39
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器
页数 文件大小 规格书
12页 106K
描述
12 V Synchronous Buck Power MOSFET Driver

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中文翻译

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NCP5355PDR2 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：SOIC包装说明：HSOP, SOP8,.25
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.75高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：1
端子数量：8标称输出峰值电流：2 A
封装主体材料：PLASTIC/EPOXY封装代码：HSOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG峰值回流温度（摄氏度）：240
电源：12 V认证状态：Not Qualified
座面最大高度：1.75 mm子类别：MOSFET Drivers
最大供电电压：13.2 V最小供电电压：9.2 V
标称供电电压：12 V电源电压1-最大：26 V
电源电压1-分钟：9.2 V电源电压1-Nom：12 V
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
断开时间：0.055 µs接通时间：0.06 µs
宽度：3.9 mmBase Number Matches：1

NCP5355PDR2 数据手册

 浏览型号NCP5355PDR2的Datasheet PDF文件第2页浏览型号NCP5355PDR2的Datasheet PDF文件第3页浏览型号NCP5355PDR2的Datasheet PDF文件第4页浏览型号NCP5355PDR2的Datasheet PDF文件第5页浏览型号NCP5355PDR2的Datasheet PDF文件第6页浏览型号NCP5355PDR2的Datasheet PDF文件第7页 
NCP5355  
12 V Synchronous Buck  
Power MOSFET Driver  
The NCP5355 is a dual MOSFET gate driver optimized to drive the  
gates of both high− and low−side Power MOSFETs in a Synchronous  
Buck converter. The NCP5355 is an excellent companion to  
multiphase controllers that do not have integrated gate drivers, such as  
ON Semiconductor’s NCP5314 or NCP5316. This architecture  
provides the power supply designer greater flexibility by being able to  
locate the gate drivers close to the MOSFETs.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Driving MOSFETs with a 12 V source as opposed to a 5.0 V can  
significantly reduce conduction losses. Optimized internal, adaptive  
nonoverlap circuitry further reduces switching losses by preventing  
simultaneous conduction of both MOSFETs.  
The floating top driver design can accommodate MOSFET drain  
voltages as high as 26 V. Both gate outputs can be driven low by  
applying a low logic level to the Enable (EN) pin. An Undervoltage  
Lockout function ensures that both driver outputs are low when the  
supply voltage is low, and a Thermal Shutdown function provides the  
IC with overtemperature protection.  
8
SO−8  
D SUFFIX  
CASE 751  
5355  
8
8
ALYW  
1
1
8
SO−8 EP  
D SUFFIX  
CASE 751AC  
5355  
ALYW  
1
The NCP5355 has the same pinout as the NCP5351 5.0 V  
Gate Driver.  
1
A
L
Y
= Assembly Location  
= Wafer Lot  
= Year  
Features  
• 8.0 V − 14 V Gate Drive Capability  
• 2.0 A Peak Drive Current  
W = Work Week  
• Rise and Fall Times < 15 ns Typical into 3300 pF  
• Propagation Delay from Inputs to Outputs < 30 ns  
• Adaptive Nonoverlap Time Optimized for Large Power MOSFETs  
• Floating Top Driver Accommodates Applications Up to 26 V  
• Undervoltage Lockout to Prevent Switching when the Input  
Voltage is Low  
PIN CONNECTIONS  
1
8
DRN  
TG  
PGND  
BG  
BST  
CO  
V
S
EN  
• Thermal Shutdown Protection Against Overtemperature  
• TG to DRN Pull−Down Resistor Prevents HV Supply−Induced  
Turn−On of Top MOSFET  
ORDERING INFORMATION  
• BG to PGND Pull−Down Resistor Prevents Transient Turn On of  
Bottom MOSFET  
†
Device  
Package  
Shipping  
98 Units/Rail  
NCP5355D  
SO−8  
SO−8  
• Internal Bootstrap Diode Reduces Parts Count and Total  
Solution Cost  
2500 / Tape & Reel  
2500 / Tape & Reel  
NCP5355DR2  
NCP5355PDR2  
SO−8 EP  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 6  
NCP5355/D  
1234567...12

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