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NCP5351MNR2G

更新时间： 2024-09-24 12:33:47
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
14页 225K
描述
4 A Synchronous Buck Power MOSFET Driver

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中文翻译

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NCP5351MNR2G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：DFN包装说明：HVSON, SOLCC10,.11,20
针数：10Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：1 week风险等级：5.33
Is Samacsys：N高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：S-PDSO-N10
JESD-609代码：e3长度：3 mm
湿度敏感等级：1功能数量：1
端子数量：10最高工作温度：85 °C
最低工作温度：-30 °C标称输出峰值电流：4 A
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装等效代码：SOLCC10,.11,20封装形状：SQUARE
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：5 V认证状态：Not Qualified
座面最大高度：1 mm子类别：MOSFET Drivers
标称供电电压：5 V表面贴装：YES
温度等级：OTHER端子面层：Tin (Sn)
端子形式：NO LEAD端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
断开时间：0.037 µs接通时间：0.08 µs
宽度：3 mmBase Number Matches：1

NCP5351MNR2G 数据手册

 浏览型号NCP5351MNR2G的Datasheet PDF文件第2页浏览型号NCP5351MNR2G的Datasheet PDF文件第3页浏览型号NCP5351MNR2G的Datasheet PDF文件第4页浏览型号NCP5351MNR2G的Datasheet PDF文件第5页浏览型号NCP5351MNR2G的Datasheet PDF文件第6页浏览型号NCP5351MNR2G的Datasheet PDF文件第7页 
NCP5351  
4 A Synchronous Buck  
Power MOSFET Driver  
The NCP5351 is a dual MOSFET gate driver optimized to drive the  
gates of both high−side and low−side Power MOSFETs in a  
Synchronous Buck converter. The NCP5351 is an excellent  
companion to multiphase controllers that do not have integrated gate  
drivers, such as ON Semiconductor’s CS5323, CS5305 or CS5307.  
This architecture provides a power supply designer the flexibility to  
locate the gate drivers close to the MOSFETs.  
The 4.0 A drive capability makes the NCP5351 ideal for minimizing  
switching losses in MOSFETs with large input capacitance. Optimized  
internal, adaptive nonoverlap circuitry further reduces switching  
losses by preventing simultaneous conduction of both MOSFETs.  
The floating top driver design can accommodate MOSFET drain  
voltages as high as 25 V. Both gate outputs can be driven low, and  
supply current reduced to less than 25 mA, by applying a low logic  
level to the Enable (EN) pin. An undervoltage lockout function  
ensures that both driver outputs are low when the supply voltage is  
low, and a thermal shutdown function provides the IC with  
overtemperature protection.  
http://onsemi.com  
MARKING  
DIAGRAMS  
8
SO−8  
D SUFFIX  
CASE 751  
5351  
ALYW  
8
1
G
1
1
DFN10  
MN SUFFIX  
CASE 485C  
5351  
ALYWG  
G
1
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
The NCP5351 is pin−to−pin compatible with the SC1205 and is  
available in a standard SO−8 package and thermally enhanced  
DFN10.  
(Note: Microdot may be in either location)  
Features  
PIN CONNECTIONS  
• 4.0 A Peak Drive Current  
SO−8  
• Rise and Fall Times < 15 ns Typical into 6000 pF  
• Propagation Delay from Inputs to Outputs < 20 ns  
• Adaptive Nonoverlap Time Optimized for Large Power MOSFETs  
1
8
DRN  
TG  
PGND  
BG  
BST  
CO  
V
S
• Floating Top Driver Accommodates Applications Up to 25 V  
• Undervoltage Lockout to Prevent Switching when the Input  
Voltage is Low  
EN  
DFN10  
1
10  
• Thermal Shutdown Protection Against Overtemperature  
DRN  
GND  
BG  
N/C  
TG  
N/C  
BST  
CO  
• < 1.0 mA Quiescent Current − Enabled  
• 25 mA Quiescent Current − Disabled  
V
S
• Internal TG to DRN Pulldown Resistor Prevents HV Supply−Induced  
Turn On of High−Side MOSFET  
EN  
• Pb−Free Package is Available  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 12 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
February, 2010 − Rev. 13  
NCP5351/D  
1234567...14

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NCP5351MNR2G 替代型号

型号 品牌 替代类型 描述 数据表
NCP5351MNR2 ONSEMI

完全替代

 4 A Synchronous Buck Power MOSFET Driver

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