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NCP5355

更新时间： 2024-11-11 22:50:59

品牌	Logo	应用领域
安森美 - ONSEMI		驱动器
页数	文件大小	规格书
12页	106K
描述
12 V Synchronous Buck Power MOSFET Driver

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NCP5355 数据手册

NCP5355

12 V Synchronous Buck

Power MOSFET Driver

The NCP5355 is a dual MOSFET gate driver optimized to drive the

gates of both high− and low−side Power MOSFETs in a Synchronous

Buck converter. The NCP5355 is an excellent companion to

multiphase controllers that do not have integrated gate drivers, such as

ON Semiconductor’s NCP5314 or NCP5316. This architecture

provides the power supply designer greater flexibility by being able to

locate the gate drivers close to the MOSFETs.

http://onsemi.com

MARKING

DIAGRAMS

Driving MOSFETs with a 12 V source as opposed to a 5.0 V can

significantly reduce conduction losses. Optimized internal, adaptive

nonoverlap circuitry further reduces switching losses by preventing

simultaneous conduction of both MOSFETs.

The floating top driver design can accommodate MOSFET drain

voltages as high as 26 V. Both gate outputs can be driven low by

applying a low logic level to the Enable (EN) pin. An Undervoltage

Lockout function ensures that both driver outputs are low when the

supply voltage is low, and a Thermal Shutdown function provides the

IC with overtemperature protection.

SO−8

D SUFFIX

CASE 751

5355

ALYW

SO−8 EP

D SUFFIX

CASE 751AC

5355

ALYW

The NCP5355 has the same pinout as the NCP5351 5.0 V

Gate Driver.

= Assembly Location

= Wafer Lot

= Year

Features

• 8.0 V − 14 V Gate Drive Capability

• 2.0 A Peak Drive Current

W = Work Week

• Rise and Fall Times < 15 ns Typical into 3300 pF

• Propagation Delay from Inputs to Outputs < 30 ns

• Adaptive Nonoverlap Time Optimized for Large Power MOSFETs

• Floating Top Driver Accommodates Applications Up to 26 V

• Undervoltage Lockout to Prevent Switching when the Input

Voltage is Low

PIN CONNECTIONS

DRN

PGND

BST

• Thermal Shutdown Protection Against Overtemperature

• TG to DRN Pull−Down Resistor Prevents HV Supply−Induced

Turn−On of Top MOSFET

ORDERING INFORMATION

• BG to PGND Pull−Down Resistor Prevents Transient Turn On of

Bottom MOSFET

†

Device

Package

Shipping

98 Units/Rail

NCP5355D

SO−8

• Internal Bootstrap Diode Reduces Parts Count and Total

Solution Cost

2500 / Tape & Reel

NCP5355DR2

NCP5355PDR2

SO−8 EP

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 6

NCP5355/D

12 3 4 5 6 7...12

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与NCP5355相关器件

型号	品牌	获取价格	描述	数据表
NCP5355/D	ETC	获取价格	12V Synchronous Buck Power MOSFET Driver
NCP5355D	ROCHESTER	获取价格	2 A HALF BRDG BASED MOSFET DRIVER, PDSO8, SOIC-8
NCP5355D	ONSEMI	获取价格	12 V Synchronous Buck Power MOSFET Driver
NCP5355DG	ONSEMI	获取价格	12 V Synchronous Buck Power MOSFET Driver, SOIC-8 Narrow Body, 98-TUBE
NCP5355DR2	ONSEMI	获取价格	12 V Synchronous Buck Power MOSFET Driver
NCP5355DR2	ROCHESTER	获取价格	2 A HALF BRDG BASED MOSFET DRIVER, PDSO8, SOIC-8
NCP5355DR2G	ROCHESTER	获取价格	2 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, SOIC-8
NCP5355DR2G	ONSEMI	获取价格	12 V，同步降压功率 MOSFET 驱动器
NCP5355PDR2	ONSEMI	获取价格	12 V Synchronous Buck Power MOSFET Driver
NCP5355PDR2G	ONSEMI	获取价格	IC 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8, SOIC-8, MOSFET Driver

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