Datasheet > NCP51100ASNT1G

NCP51100ASNT1G

更新时间： 2024-11-24 11:11:31

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
14页	2137K
描述
Single 2 A High-Speed, Low-Side Gate Driver

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCP51100ASNT1G 数据手册

DATA SHEET

www.onsemi.com

Single 2 A High-Speed,

Low-Side Gate Driver

Product Preview

SOT23−5

CASE 527AH

NCP51100

The NCP51100 2 A gate driver is designed to drive an N−Channel

enhancement−mode MOSFET in low −side switching applications by

providing high peak current pulses during the short switching

intervals. The driver is available with TTL input thresholds. Internal

circuitry provides an under−voltage lockout function by holding

the output LOW until the supply voltage is within the operating range.

The NCP51100 delivers fast MOSFET switching performance, which

helps maximize efficiency in high frequency power converter designs.

NCP51100 drivers incorporate MillerDrivet architecture for the final

output stage. This bipolar−MOSFET combination provides high peak

current during the Miller plateau stage of the MOSFET

turn−on / turn−off process to minimize switching loss, while

providing rail−to−rail voltage swing and reverse current capability.

The NCP51100 is available in industry standard, 5−pin, SOT23.

MARKING DIAGRAM

AAA

= Specific Device Code

= Month Code

PIN CONNECTIONS

VDD

Features

GND

OUT

• Industry−Standard Pinouts

• 11 V to 18 V Operating Range

OUT

• 3 A Peak Sink/Source at V = 12 V

• 2.5 A Sink / 1.8 A Source at V

= 6 V

OUT

• 14 ns / 7 ns Typical Rise/Fall Times (1 nF Load)

• Under 20 ns Typical Propagation Delay Time

• MillerDrivet Technology

ORDERING INFORMATION

†

Device

NCP51100ASNT1G

Shipping

Package

SOT23−5L

Tape & Reel

3000

• 5−Lead SOT23 Package

• Rated from –40°C to +125°C Ambient

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Typical Applications

• Switch−Mode Power Supplies

• High−Efficiency MOSFET Switching

• Synchronous Rectifier Circuits

• DC−to−DC Converters

• Motor Control

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

February, 2022 − Rev. P1

NCP51100/D

12 3 4 5 6 7...14

中文翻译

下载PDF

与NCP51100ASNT1G相关器件

型号	品牌	获取价格	描述	数据表
NCP51105ASNT1G	ONSEMI	获取价格	Single 2.6 A, Low-Side Gate Driver with OCP
NCP5111	ONSEMI	获取价格	High Voltage, High and Low Side Driver
NCP5111DR2G	ONSEMI	获取价格	High Voltage, High and Low Side Driver
NCP5111PG	ONSEMI	获取价格	High Voltage, High and Low Side Driver
NCP51145	ONSEMI	获取价格	DDR 1.8 Amp Source Termination Regulator
NCP51145_17	ONSEMI	获取价格	DDR 1.8 Amp Source Termination Regulator
NCP51145MNTAG	ONSEMI	获取价格	DDR 1.8 Amp Source Termination Regulator
NCP51145PDR2G	ONSEMI	获取价格	DDR 1.8 Amp Source Termination Regulator
NCP51190	ONSEMI	获取价格	1.5A DDR Memory Termination Regulator
NCP51190_14	ONSEMI	获取价格	1.5A DDR Memory Termination Regulator

与NCP51100ASNT1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

NCP51100ASNT1G

NCP51100ASNT1G 数据手册

与NCP51100ASNT1G相关器件

与NCP51100ASNT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NCP51100ASNT1G

NCP51100ASNT1G 数据手册

与NCP51100ASNT1G相关器件

与NCP51100ASNT1G相关文章

您还可以找

您在本页遇到什么问题？