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NCP51198PDR2G PDF预览

NCP51198PDR2G

更新时间： 2024-11-24 11:11:11
品牌 Logo 应用领域
安森美 - ONSEMI 双倍数据速率稳压器
页数 文件大小 规格书
10页 219K
描述
1.5 A DDR 端接稳压器

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中文翻译

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NCP51198PDR2G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：HSOP,针数：8
Reach Compliance Code：compliantHTS代码：8542.39.00.01
Factory Lead Time：6 weeks风险等级：1.47
Base Number Matches：1

NCP51198PDR2G 数据手册

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DATA SHEET  
www.onsemi.com  
MARKING  
DIAGRAM  
1.5A DDR Memory  
Termination Regulator  
8
SOIC8−NB EP  
PD SUFFIX  
XXXXXXXXX  
8
ALYWX  
NCP51198, NCV51198  
The NCP/NCV51198 is a simple, cost−effective, high−speed linear  
CASE 751BU  
G
1
1
regulator designed to generate the V termination voltage rail for  
TT  
XXXXX = Specific Device Code  
DDR−I, DDR−II and DDR−III memory. The regulator is capable of  
actively sourcing or sinking up to 1.5 A for DDR−I, or up to 0.5 A  
for DDR−II /−III while regulating the output voltage to within  
30 mV.  
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
The output termination voltage is tightly regulated to track V  
=
TT  
(V  
/ 2) over the entire current range.  
DDQ  
The NCP/NCV51198 incorporates a high−speed differential  
amplifier to provide ultra−fast response to line and load transients.  
Other features include extremely low initial offset voltage, excellent  
load regulation, source/sink soft−start and on−chip thermal shut−down  
protection.  
PIN CONNECTION  
1
8
GND  
/SS  
V
TT  
PV  
V
CC  
V
TTS  
CC  
The NCP/NCV51198 features the power−saving Suspend To Ram  
(STR) function which will tri−state the regulator output and lower the  
quiescent current drawn when the /SS pin is pulled low.  
The NCP/NCV51198 is available in a SOIC−8 Exposed Pad  
package.  
V
V
DDQ  
REF  
SOIC−8 EP  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 8 of this data sheet.  
Features  
• Generate DDR Memory Termination Voltage (V  
)
TT  
• For DDR−I, DDR−II, DDR−III Source / Sink Currents  
• Supports DDR−I to 1.5 A, DDR−II to 0.5 A (peak)  
• Integrated Power MOSFETs with Thermal Protection  
• Stable with 10 mF Ceramic V Capacitor  
TT  
• High Accuracy Output Voltage at Full−Load  
• Minimal External Component Count  
• Shutdown for Standby or Suspend to RAM (STR) mode  
• Built−in Soft Start  
• NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
• These are Pb−Free Devices  
Appications  
• Desktop PC’s, Notebooks, and Workstations  
• Graphics Card DDR Memory Termination  
• Set Top Boxes, Digital TV’s, Printers  
• Embedded Systems  
• Active Bus Termination  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2022 − Rev. 4  
NCP51198/D  
1234567...10

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NCP51198PDR2G 替代型号

型号 品牌 替代类型 描述 数据表
LP2998QMRE/NOPB TI

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