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NCP51198PDR2G PDF预览

NCP51198PDR2G

更新时间: 2024-09-29 11:11:11
品牌 Logo 应用领域
安森美 - ONSEMI 双倍数据速率稳压器
页数 文件大小 规格书
10页 219K
描述
1.5 A DDR 端接稳压器

NCP51198PDR2G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:HSOP,针数:8
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:6 weeks风险等级:1.47
Base Number Matches:1

NCP51198PDR2G 数据手册

 浏览型号NCP51198PDR2G的Datasheet PDF文件第2页浏览型号NCP51198PDR2G的Datasheet PDF文件第3页浏览型号NCP51198PDR2G的Datasheet PDF文件第4页浏览型号NCP51198PDR2G的Datasheet PDF文件第5页浏览型号NCP51198PDR2G的Datasheet PDF文件第6页浏览型号NCP51198PDR2G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MARKING  
DIAGRAM  
1.5A DDR Memory  
Termination Regulator  
8
SOIC8NB EP  
PD SUFFIX  
XXXXXXXXX  
8
ALYWX  
NCP51198, NCV51198  
The NCP/NCV51198 is a simple, costeffective, highspeed linear  
CASE 751BU  
G
1
1
regulator designed to generate the V termination voltage rail for  
TT  
XXXXX = Specific Device Code  
DDRI, DDRII and DDRIII memory. The regulator is capable of  
actively sourcing or sinking up to 1.5 A for DDRI, or up to 0.5 A  
for DDRII /III while regulating the output voltage to within  
30 mV.  
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= PbFree Package  
The output termination voltage is tightly regulated to track V  
=
TT  
(V  
/ 2) over the entire current range.  
DDQ  
The NCP/NCV51198 incorporates a highspeed differential  
amplifier to provide ultrafast response to line and load transients.  
Other features include extremely low initial offset voltage, excellent  
load regulation, source/sink softstart and onchip thermal shutdown  
protection.  
PIN CONNECTION  
1
8
GND  
/SS  
V
TT  
PV  
V
CC  
V
TTS  
CC  
The NCP/NCV51198 features the powersaving Suspend To Ram  
(STR) function which will tristate the regulator output and lower the  
quiescent current drawn when the /SS pin is pulled low.  
The NCP/NCV51198 is available in a SOIC8 Exposed Pad  
package.  
V
V
DDQ  
REF  
SOIC8 EP  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 8 of this data sheet.  
Features  
Generate DDR Memory Termination Voltage (V  
)
TT  
For DDRI, DDRII, DDRIII Source / Sink Currents  
Supports DDRI to 1.5 A, DDRII to 0.5 A (peak)  
Integrated Power MOSFETs with Thermal Protection  
Stable with 10 mF Ceramic V Capacitor  
TT  
High Accuracy Output Voltage at FullLoad  
Minimal External Component Count  
Shutdown for Standby or Suspend to RAM (STR) mode  
Builtin Soft Start  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
These are PbFree Devices  
Appications  
Desktop PC’s, Notebooks, and Workstations  
Graphics Card DDR Memory Termination  
Set Top Boxes, Digital TV’s, Printers  
Embedded Systems  
Active Bus Termination  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2022 Rev. 4  
NCP51198/D  

NCP51198PDR2G 替代型号

型号 品牌 替代类型 描述 数据表
LP2998QMRE/NOPB TI

功能相似

用于汽车应用的 DDR 终端稳压器 | DDA | 8 | -40 to 125

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