5秒后页面跳转
NCP51145MNTAG PDF预览

NCP51145MNTAG

更新时间: 2024-09-28 01:08:03
品牌 Logo 应用领域
安森美 - ONSEMI 双倍数据速率接口集成电路
页数 文件大小 规格书
6页 82K
描述
DDR 1.8 Amp Source Termination Regulator

NCP51145MNTAG 技术参数

是否无铅:不含铅生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:4 weeks风险等级:1.47
Is Samacsys:N接口集成电路类型:BUS TERMINATOR SUPPORT CIRCUIT
JESD-609代码:e3湿度敏感等级:1
端子面层:Tin (Sn)Base Number Matches:1

NCP51145MNTAG 数据手册

 浏览型号NCP51145MNTAG的Datasheet PDF文件第2页浏览型号NCP51145MNTAG的Datasheet PDF文件第3页浏览型号NCP51145MNTAG的Datasheet PDF文件第4页浏览型号NCP51145MNTAG的Datasheet PDF文件第5页浏览型号NCP51145MNTAG的Datasheet PDF文件第6页 
NCP51145  
DDR 1.8 Amp Source / Sink  
VTT Termination Regulator  
The NCP51145 is a linear regulator designed to supply a regulated  
V
TT  
termination voltage for DDR−II, DDR−III, LPDDR−III and  
DDR−IV memory applications. The regulator is capable of actively  
sourcing and sinking 1.8 A peak currents while regulating an output  
voltage to within 20 mV. The output termination voltage is regulated  
www.onsemi.com  
to track V  
/ 2 by two external voltage divider resistors connected  
DDQ  
MARKING  
DIAGRAMS  
to the PV , GND, and V  
pins.  
CC  
REF  
The NCP51145 incorporates a high−speed differential amplifier to  
provide ultra−fast response to line and load transients. Other features  
include source/sink current limiting, soft−start and on−chip thermal  
shutdown protection.  
8
SOIC−8 EP  
D SUFFIX  
CASE 751BU  
51145  
AYWWG  
G
8
1
Features  
1
For DDR V Applications, Source/Sink Currents:  
TT  
1
DFN8  
MN SUFFIX  
CASE 506AA  
Supports DDR−II to 1.8 A, DDR−III to 1.5 A  
Supports LPDDR−III and DDR−IV to 1.2 A  
Stable Using Ceramic−Only (Very Low ESR) Capacitors  
Integrated Power MOSFETs  
XXMG  
G
1
51145 = Specific Device Code  
XX  
M
A
= Specific Device Code  
= Date Code  
= Assembly Location  
= Year  
High Accuracy V Output at Full−Load  
TT  
Fast Transient Response  
Y
Built−in Soft−Start  
WW  
G
= Work Week  
= Pb−Free Package  
Shutdown for Standby or Suspend Mode  
(Note: Microdot may be in either location)  
Integrated Thermal and Current−Limit Protection  
V Remote Sense Available in the DFN8 2x2mm Package  
TT  
PIN CONNECTIONS  
These Devices are Pb−Free and are RoHS Compliant  
1
8
1
8
Typical Applications  
PVCC  
V
CC  
PVCC  
GND  
NC  
NC  
NC  
V
V
DDR−II / DR−III / DDR−IV SDRAM Termination Voltage  
Motherboard, Notebook, and VGA Card Memory Termination  
Set Top Box, Digital TV, Printers  
TT  
NC  
TTS  
VREF  
V
CC  
VREF  
GND  
V
NC  
TT  
SOIC−8 EP  
DFN8 2x2, 0.5P  
(Top Views)  
Low Power DDR−3LP  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NCP51145PDR2G  
SOIC−8  
2500 / Tape &  
(Pb−Free)  
Reel  
NCP51145MNTAG  
DFN−8  
(Pb−Free)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
April, 2017 − Rev. 3  
NCP51145/D  

与NCP51145MNTAG相关器件

型号 品牌 获取价格 描述 数据表
NCP51145PDR2G ONSEMI

获取价格

DDR 1.8 Amp Source Termination Regulator
NCP51190 ONSEMI

获取价格

1.5A DDR Memory Termination Regulator
NCP51190_14 ONSEMI

获取价格

1.5A DDR Memory Termination Regulator
NCP51190_17 ONSEMI

获取价格

1.5A DDR Memory Termination Regulator
NCP51190MNTAG ONSEMI

获取价格

1.5A DDR Memory Termination Regulator
NCP51198PDR2G ONSEMI

获取价格

1.5 A DDR 端接稳压器
NCP51199 ONSEMI

获取价格

DDR 2-Amp Source / Sink VTT Termination Regulator
NCP51199_17 ONSEMI

获取价格

DDR 2-Amp Source / Sink VTT Termination Regulator
NCP51199PDR2G ONSEMI

获取价格

DDR 2-Amp Source / Sink VTT Termination Regulator
NCP511SN15T1 ONSEMI

获取价格

150 mA CMOS Low Iq Low-Dropout Voltage Regulator