Datasheet > NCP51190_17

NCP51190_17

更新时间： 2024-11-24 01:20:15

品牌	Logo	应用领域
安森美 - ONSEMI		双倍数据速率
页数	文件大小	规格书
9页	113K
描述
1.5A DDR Memory Termination Regulator

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCP51190_17 数据手册

NCP51190, NCV51190

1.5A DDR Memory

Termination Regulator

The NCP/NCV51190 is a simple, cost−effective, high−speed linear

regulator designed to generate the V termination voltage rail for

DDR−I, DDR−II and DDR−III memory. The regulator is capable of

actively sourcing or sinking up to 1.5 A for DDR−I, or up to 0.5 A

for DDR−II /−III while regulating the output voltage to within

30 mV.

www.onsemi.com

MARKING

DIAGRAM

The output termination voltage is tightly regulated to track V

/ 2) over the entire current range.

DDQ

DFN8

The NCP/NCV51190 incorporates a high−speed differential

amplifier to provide ultra−fast response to line and load transients.

Other features include extremely low initial offset voltage, excellent

load regulation, source/sink soft−start and on−chip thermal shut−down

protection.

XXMG

MN SUFFIX

CASE 506AA

XX = Specific Device Code

= Date Code

The NCP/NCV51190 features the power−saving Suspend To Ram

(STR) function which will tri−state the regulator output and lower the

quiescent current drawn when the /SS pin is pulled low.

The NCP/NCV51190 is available in a DFN8 package.

= Pb−Free Device

(Note: Microdot may be in either location)

PIN CONNECTION

Features

• Generate DDR Memory Termination Voltage (V

)

• For DDR−I, DDR−II, DDR−III Source / Sink Currents

• Supports DDR−I to 1.5 A, DDR−II, DDR−III to 0.5 A (peak)

• Integrated Power MOSFETs with Thermal Protection

• Stable with 10 mF Ceramic V Capacitor

• High Accuracy Output Voltage at Full−Load

• Minimal External Component Count

• Shutdown for Standby or Suspend to RAM (STR) mode

• Built−in Soft Start

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 8 of this data sheet.

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

• These are Pb−Free Devices

Appications

• Desktop PC’s, Notebooks, and Workstations

• Graphics Card DDR Memory Termination

• Set Top Boxes, Digital TV’s, Printers

• Embedded Systems

• Active Bus Termination

Publication Order Number:

January, 2017 − Rev. 4

NCP51190/D

12 3 4 5 6 7...9

中文翻译

下载PDF

与NCP51190_17相关器件

型号	品牌	获取价格	描述	数据表
NCP51190MNTAG	ONSEMI	获取价格	1.5A DDR Memory Termination Regulator
NCP51198PDR2G	ONSEMI	获取价格	1.5 A DDR 端接稳压器
NCP51199	ONSEMI	获取价格	DDR 2-Amp Source / Sink VTT Termination Regulator
NCP51199_17	ONSEMI	获取价格	DDR 2-Amp Source / Sink VTT Termination Regulator
NCP51199PDR2G	ONSEMI	获取价格	DDR 2-Amp Source / Sink VTT Termination Regulator
NCP511SN15T1	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator
NCP511SN15T1G	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator
NCP511SN18T1	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator
NCP511SN18T1G	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator
NCP511SN25T1	ONSEMI	获取价格	150 mA CMOS Low Iq Low-Dropout Voltage Regulator

与NCP51190_17相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

NCP51190_17

NCP51190_17 数据手册

与NCP51190_17相关器件

与NCP51190_17相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NCP51190_17

NCP51190_17 数据手册

与NCP51190_17相关器件

与NCP51190_17相关文章

您还可以找

您在本页遇到什么问题？