Datasheet > NCE65R360F

NCE65R360F

更新时间： 2024-11-22 01:13:11

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
10页	673K
描述
N-Channel Super Junction Power MOSFET ll

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NCE65R360F 数据手册

NCE65R360D,NCE65R360,NCE65R360F

N-Channel Super Junction Power MOSFET Ⅱ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

650

360

mΩ

R_DS(ON)MAX

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE65R360D

NCE65R360

NCE65R360F

TO-263

NCE65R360D

NCE65R360

NCE65R360F

TO-220

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

NCE65R360D

NCE65R360

Parameter

Symbol

NCE65R360F

Unit

650

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

V^DS

VGS

±30

Continuous Drain Current at Tc=25°C

11*

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

(Note 1)

33*

32.7

0.26

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

121

0.97

Derate above 25°C

W/°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

280

5.5

EAS

I_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

0.5

E_AR

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

http://www.ncepower.com

v1.0

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