NCE65T180V
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
650
199
21
V
mΩ
A
RDS(ON) MAX
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T180V
DFN8×8
NCE65T180V
DFN8×8
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
Value
650
±30
21
Unit
V
Drain-Source Voltage (VGS=0V)
V
Gate-Source Voltage (VDS=0V), AC (f>1 Hz)
Continuous Drain Current at TC=25°C
Continuous Drain Current at TC=100°C
VGS
A
ID (DC)
ID (DC)
IDM (pluse)
PD
13.2
84
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(TC=25℃)
188
1.5
W
Derate above 25°C
W/°C
mJ
A
(Note 2)
441
10.5
EAS
IAR
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive Avalanche energy ,tAR limited by TJmax
(Note 1)
0.7
EAR
mJ
Wuxi NCE Power Co., Ltd
Page
http://www.ncepower.com
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