Datasheet > NCE65T360F

NCE65T360F

更新时间： 2024-04-09 19:00:47

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关栅栅极
页数	文件大小	规格书
10页	1699K
描述
新洁能提供击穿电压等级范围为500V至800V的N沟道SJ-III系列功率MOSFET产品，以良好的导通电阻，极低的栅极电荷，出色的开关速度，以及极具竞争力的性价比，成为开关电源应用中的理想选择。

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NCE65T360F 数据手册

NCE65T360D,NCE65T360,NCE65T360F

N-Channel Super Junction Power MOSFET Ⅲ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

290

11.5

mΩ

R_DS(ON)TYP

I_D

Features

● New technology for high voltage device

● Low on-resistance and low conduction losses

● small package

● Ultra Low Gate Charge cause lower driving requirements

● 100% Avalanche Tested

● ROHS compliant

Application

●

Power factor correction（PFC）

Schematic diagram

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

Package Marking And Ordering Information

Device

Device Package

TO-263

Marking

NCE65T360D

NCE65T360

NCE65T360F

NCE65T360D

NCE65T360

NCE65T360F

TO-220

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

NCE65T360D

NCE65T360

Parameter

Symbol

NCE65T360F

Unit

650

Drain-Source Voltage (VGS=0V）

VDS

VGS

±30

Gate-Source Voltage (VDS=0V), AC(f>1HZ)

Continuous Drain Current at T_C=25°C

Continuous Drain Current at T_C=100°C

11.5

11.5*

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

46*

Pulsed drain current

Maximum Power Dissipation(T_C=25℃)

101

0.81

32.6

0.26

Derate above 25°C

W/°C

(Note2)

144

E^AS

I_AR

Single pulse avalanche energy

Avalanche current^{(Note 1)}

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

0.5

E_AR

Wuxi NCE Power Co., Ltd

Page 1

http://www.ncepower.com

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