Datasheet > NCE65R900I

NCE65R900I

更新时间： 2024-11-22 01:21:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
8页	777K
描述
N-Channel Super Junction Power MOSFET ll

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中文翻译

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NCE65R900I 数据手册

NCE65R900I，NCE65R900K

N-Channel Super Junction Power MOSFET Ⅱ

General Description

The series of devices use advanced super junction

technology and design to provide excellent RDS(ON) with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

R_DS(ON).

I_D

650

900

mΩ

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

NCE65R900I

NCE65R900K

TO-251

NCE65R900I

NCE65R900K

TO-252

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

VDS

Value

Unit

650

±30

Drain-Source Voltage (VGS=0V）

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

Continuous Drain Current at Tc=100°C

I_{D (DC)}

(Note 1)

I_{DM (pluse)}

Pulsed drain current

Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =

dv/dt

P_D

V/ns

125 °C

Maximum Power Dissipation(Tc=25℃)

Derate above 25°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

0.39

135

2.5

W/°C

EAS

I_AR

Wuxi NCE Power Semiconductor Co., Ltd

Page

http://www.ncepower.com

v1.0

12 3 4 5 6 7 8

中文翻译

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