NCE65T1K2K,NCE65T1K2I
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
650
950
4
V
mΩ
A
RDS(ON)TYP.
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T1K2I
NCE65T1K2K
TO-251
NCE65T1K2I
NCE65T1K2K
TO-252
TO-251
TO-252
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
VDS
Value
Unit
V
650
±30
4
Drain-Source Voltage (VGS=0V)
V
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
VGS
A
ID (DC)
ID (DC)
IDM (pluse)
PD
2.5
16
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
41
W
Derate above 25°C
0.328
27
W/°C
mJ
A
(Note2)
EAS
IAR
Single pulse avalanche energy
(Note 1)
0.7
Avalanche current
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
0.1
EAR
mJ
Wuxi NCE Power Co., Ltd
Page
1
http://www.ncepower.com
V1.0