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NB4N11M PDF预览

NB4N11M

更新时间: 2024-01-26 15:31:16
品牌 Logo 应用领域
安森美 - ONSEMI 时钟
页数 文件大小 规格书
11页 223K
描述
3.3 V 2.5 Gb/s Multi Level Clock/Data Input to CML Receiver/ Buffer/ Translator

NB4N11M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFN
包装说明:HVQCCN,针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:5.81其他特性:CML, LVCMOS, LVTTL OR LVDS TO LVDS TRANSLATION ALSO POSSIBLE
最大延迟:0.47 ns接口集成电路类型:PECL TO LVDS TRANSLATOR
JESD-30 代码:S-XQCC-N16长度:3 mm
湿度敏感等级:1位数:1
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
输出锁存器或寄存器:NONE输出极性:COMPLEMENTARY
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1 mm最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Nickel/Gold/Palladium (Ni/Au/Pd)端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:3 mm
Base Number Matches:1

NB4N11M 数据手册

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NB4N11M  
3.3 V 2.5 Gb/s Multi Level  
Clock/Data Input to CML  
Receiver/ Buffer/ Translator  
Description  
http://onsemi.com  
The NB4N11M is a differential 1to2 clock/data  
distribution/translation chip with CML output structure, targeted for  
highspeed clock/data applications. The device is functionally  
equivalent to the EP11, LVEP11, SG11 or 7L11M devices. Device  
produces two identical differential output copies of clock or  
data signal operating up to 2.5 GHz or 2.5 Gb/s, respectively. As such,  
NB4N11M is ideal for SONET, GigE, Fiber Channel, Backplane and  
other clock/data distribution applications.  
MARKING  
DIAGRAM*  
8
8
1
E11M  
ALYWG  
G
TSSOP8  
DT SUFFIX  
CASE 948R  
1
Inputs accept LVPECL, CML, LVCMOS, LVTTL, or LVDS  
(See Table 5). The CML outputs are 16 mA open collector  
(See Figure 18) which requires resistor (R ) load path to V  
L
TT  
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= PbFree Package  
termination voltage. The open collector CML outputs must be  
terminated to V at power up. Differential outputs produces  
TT  
current–mode logic (CML) compatible levels when receiver loaded  
with 50 W or 25 W loads connected to 1.8 V, 2.5 V or 3.3 V supplies  
(see Figure 19). This simplifies device interface by eliminating a need  
for coupling capacitors.  
The device is offered in a small 8pin TSSOP package.  
Application notes, models, and support documentation are available  
at www.onsemi.com.  
(Note: Microdot may be in either location)  
*For additional marking information, refer to  
Application Note AND8002/D.  
Q0  
Q0  
Features  
Maximum Input Clock Frequency > 2.5 GHz  
Maximum Input Data Rate > 2.5 Gb/s  
Typically 1 ps of RMS Clock Jitter  
D
D
Typically 10 ps of Data Dependent Jitter @ 2.5 Gb/s, R = 25 W  
L
Q1  
Q1  
420 ps Typical Propagation Delay  
150 ps Typical Rise and Fall Times  
Operating Range: V = 3.0 V to 3.6 V with V = 0 V and  
CC  
EE  
Figure 1. Functional Block Diagram  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
V
TT  
= 1.8 V to 3.6 V  
Functionally Compatible with Existing 2.5 V / 3.3 V LVEL, LVEP,  
EP, and SG Devices  
These are PbFree Devices*  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 Rev. 1  
NB4N11M/D  

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