Datasheet > NAND08GW3B4DZL6E

NAND08GW3B4DZL6E

更新时间： 2024-11-23 04:57:39

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
69页	1707K
描述
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NAND08GW3B4DZL6E 数据手册

NAND04G-B2D, NAND08G-BxC

4 Gbit, 8 Gbit, 2112 byte/1056 word page

multiplane architecture, 1.8 V or 3 V, NAND Flash memories

Preliminary Data

Features

■ High density NAND Flash Memory

– Up to 8 Gbit memory array

– Cost-effective solution for mass storage

applications

■ NAND interface

TSOP48 12 x 20 mm (N)

– x8 or 16x bus width

– Multiplexed address/data

LGA

■ Supply voltage: 1.8 V or 3.0 V device

■ Page size

LGA52 12 x 17 mm (ZL)

– x8 device: (2048 + 64 spare) bytes

– x16 device: (1024 + 32 spare) words

■ Data protection:

■ Block size

– Hardware program/erase disabled during

power transitions

– x8 device: (128K + 4 K spare) bytes

– x16 device: (64K + 2 K spare) words

– Non-volatile protection option

■ ONFI 1.0 compliant command set

■ Data integrity

■ Multiplane architecture

– Array split into two independent planes

– Program/erase operations can be

– 100 000 program/erase cycles (with ECC

(error correction code))

performed on both planes at the same time

■ Page read/program

– 10 years data retention

– Random access: 25 µs (max)

– Sequential access: 25 ns (min)

– Page program time: 200 µs (typ)

■ ECOPACK packages

Table 1.

Device Summary

Part number

– Multiplane page program time (2 pages):

200 µs (typ)

Reference

NAND04GR3B2D

NAND04GW3B2D

NAND04GR4B2D⁽¹⁾

NAND04GW4B2D⁽¹⁾

NAND08GR3B2C,

NAND08GW3B2C

NAND08GR4B2C⁽¹⁾

NAND08GW4B2C⁽¹⁾

NAND08GR3B4C

NAND08GW3B4C

■ Copy back program with automatic error

detection code (EDC)

NAND04G-B2D

NAND08G-BxC

■ Cache read mode

■ Fast block erase

– Block erase time: 1.5 ms (typ)

– Multiblock erase time (2 blocks):

1.5 ms (typ)

■ Status Register

■ Electronic signature

■ Chip Enable ‘don’t care’

■ Serial number option

1. x16 organization only available for MCP products.

December 2007

Rev 3

1/69

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.numonyx.com

12 3 4 5 6 7...69

中文翻译

下载PDF

与NAND08GW3B4DZL6E相关器件

型号	品牌	获取价格	描述	数据表
NAND08GW3B4DZL6F	NUMONYX	获取价格	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash
NAND08GW3C2A	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AN1E	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AN1F	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AN6E	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AN6F	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AZL1E	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AZL1F	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AZL6E	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND08GW3C2AZL6F	NUMONYX	获取价格	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

与NAND08GW3B4DZL6E相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

27
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

55
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND08GW3B4DZL6E

NAND08GW3B4DZL6E 数据手册

与NAND08GW3B4DZL6E相关器件

与NAND08GW3B4DZL6E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NAND08GW3B4DZL6E

NAND08GW3B4DZL6E 数据手册

与NAND08GW3B4DZL6E相关器件

与NAND08GW3B4DZL6E相关文章

您还可以找

您在本页遇到什么问题？