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MURD830CT

更新时间： 2024-12-01 01:10:15
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 731K
描述
8.0 Amperes Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

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MURD830CT 数据手册

 浏览型号MURD830CT的Datasheet PDF文件第2页 
MURD820CT thru MURD860CT  
MURD820CT/MURD830CT/MURD840CT/MURD860CT  
Pb Free Plating Product  
8.0 Amperes Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers  
TO-252/DPAK  
Unit : inch (mm)  
Latest GPP EPI P/G Technology  
¬
¬
¬
¬
¬
¬
(
)
)
(
)
)
.264 6.7  
.098 2.5  
(
.248 6.3  
(
.082 2.1  
Good Soft Recovery Characteristics  
Ideally Suited for Automatic Assembly  
Low Forward Voltage  
(
)
)
.024 0.6  
(
)
)
.216 5.5  
(
.200 5.1  
(
.016 0.4  
Features  
4
High Surge Current Capability  
Low Leakage Current  
(
)
)
.106 2.7  
2
(
.090 2.3  
Freewheeling, Snubber, Clamp  
Inversion Welder  
PFC  
¬
1
3
¬
¬
¬
¬
¬
¬
(
.02 .5  
)
)
(
)
)
.032 0.8  
(
.012 0.3  
(
.09 .09  
.071 1.8  
Applications  
( )  
.051 1.3  
(
) (  
2.3 2.3  
)
Plating Power Supply  
Ultrasonic Cleaner and Welder  
Converter & Chopper  
4
4
4
4
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Positive  
UPS/LED SMPS/HID  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTR"  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
Unit  
MURD820CT  
MURD830CT MURD840CT  
MURD860CT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
8.0  
4.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
100  
A
Forward Voltage per diode  
@IF = 4.0A  
VFM  
IRM  
0.98  
1.30  
1.70  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
5.0  
100  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
70  
50  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJC  
80  
6.5  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on PCB with minimum recommended pad sizes per diode.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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