Datasheet > MURD830CTR

MURD830CTR

更新时间： 2024-01-16 16:18:54

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	730K
描述
8.0 Amperes Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURD830CTR 数据手册

MURD820CTR thru MURD860CTR

MURD820CTR/MURD830CTR/MURD840CTR/MURD860CTR

Pb Free Plating Product

8.0 Amperes Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

TO-252/DPAK

Unit : inch (mm)

Latest GPP EPI P/G Technology

(

)

(

)

.264 6.7

.098 2.5

(

.248 6.3

(

.082 2.1

Good Soft Recovery Characteristics

Ideally Suited for Automatic Assembly

Low Forward Voltage

(

)

.024 0.6

(

)

.216 5.5

(

.200 5.1

(

.016 0.4

Features

High Surge Current Capability

Low Leakage Current

(

)

.106 2.7

(

.090 2.3

Freewheeling, Snubber, Clamp

Inversion Welder

PFC

(

.02 .5

)

(

)

.032 0.8

(

.012 0.3

(

.09 .09

.071 1.8

Applications

( )

.051 1.3

(

) (

2.3 2.3

)

Plating Power Supply

Ultrasonic Cleaner and Welder

Converter & Chopper

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Positive

UPS/LED SMPS/HID

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

MURD820CTR MURD830CTR MURD840CTR MURD860CTR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

8.0

4.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

100

Forward Voltage per diode

@I_F= 4.0A

VFM

IRM

0.98

1.30

1.70

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

5.0

100

µA

Reverse Recovery Time (Note 1)

t_rr

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Lead (Note 3)

R^θJA

R^θJC

6.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on PCB with minimum recommended pad sizes per diode.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

下载PDF

与MURD830CTR相关器件

型号	品牌	获取价格	描述	数据表
MURD840CT	THINKISEMI	获取价格	8.0 Amperes Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers
MURD840CT	WON-TOP	获取价格	SMD
MURD840CTR	THINKISEMI	获取价格	8.0 Amperes Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers
MURD860CT	THINKISEMI	获取价格	8.0 Amperes Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers
MURD860CT	WON-TOP	获取价格	SMD
MURD860CTR	THINKISEMI	获取价格	8.0 Amperes Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers
MURD8H60	CJ	获取价格	TO-252-2L
MURF10005	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF10005R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF10010	GENESIC	获取价格	Silicon Super Fast Recovery Diode

与MURD830CTR相关文章

LM317T数据手册解读：产品特性、应用、封装与引脚详解
2024-06-14

14
一文带你了解?DB3二极管好坏判断、参数信息、替代推荐
2024-06-14

17
LM358DR数据手册：引脚说明、电气参数及替换型号推荐
2024-06-14

11
OP07CP数据手册解读：引脚信息、电子参数
2024-06-14

17

产品中心

服务支持

精选活动

关于我们

帮助中心

MURD830CTR

MURD830CTR 数据手册

与MURD830CTR相关器件

与MURD830CTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MURD830CTR

MURD830CTR 数据手册

与MURD830CTR相关器件

与MURD830CTR相关文章

您还可以找

您在本页遇到什么问题？