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MURD620CT_11

更新时间： 2024-11-20 10:41:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关
页数 文件大小 规格书
4页 92K
描述
SWITCHMODE Power Rectifier

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MURD620CT_11 数据手册

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MURD620CT  
SWITCHMODE  
Power Rectifier  
DPAK Surface Mount Package  
These state−of−the−art devices are designed for use in switching  
power supplies, inverters and as free wheeling diodes.  
http://onsemi.com  
ULTRAFAST RECTIFIER  
6.0 AMPERES  
Features  
• Ultrafast 35 Nanosecond Recovery Time  
• Low Forward Voltage Drop  
• Low Leakage  
200 VOLTS  
• Pb−Free Packages are Available  
1
4
3
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 0.4 Gram (Approximately)  
MARKING  
DIAGRAM  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
4
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
AYWW  
U
620TG  
DPAK  
CASE 369C  
2
1
3
MAXIMUM RATINGS  
A
Y
= Assembly Location  
= Year  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
200  
V
WW  
= Work Week  
RRM  
U620T = Device Code  
= Pb−Free Package  
RWM  
V
R
G
Average Rectified Forward Current  
I
A
A
F(AV)  
(Rated V , T = 140°C)  
Per Diode  
Per Device  
3.0  
6.0  
R
C
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Peak Repetitive Forward Current  
(Rated V , Square Wave,  
I
F
6.0  
R
C
MURD620CT  
DPAK  
75 Units/Rail  
75 Units/Rail  
20 kHz, T = 145°C)  
Per Diode  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, 60 Hz)  
I
50  
A
MURD620CTG  
DPAK  
FSM  
(Pb−Free)  
MURD620CTT4  
DPAK  
2500/Tape & Reel  
2500/Tape & Reel  
Operating Junction and Storage  
Temperature Range  
T , T  
−65 to +175  
°C  
J
stg  
MURD620CTT4G  
DPAK  
(Pb−Free)  
THERMAL CHARACTERISTICS (Per Diode)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Rating  
Symbol  
Value  
9
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
R
q
JC  
JA  
Thermal Resistance, Junction−to−Ambient  
R
80  
q
(Note 1)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Rating applies when surface mounted on the minimum pad sizes  
recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 − Rev. 9  
MURD620CT/D  
 
1234

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