Datasheet > MURD620CTPBF_11

MURD620CTPBF_11

更新时间： 2024-09-29 10:41:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	142K
描述
Ultrafast Rectifier, 2 x 3 A FRED Pt

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MURD620CTPBF_11 数据手册

VS-MURD620CTPbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 3 A FRED Pt^®

FEATURES

Base

common

cathode

• Ultrafast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Compliant to RoHS Directive 2002/95/EC

Common

cathode

D-PAK (TO-252AA)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

Anode

DESCRIPTION/APPLICATIONS

VS-MURD620CTPbF is the state of the art ultrafast recovery

rectifier specifically designed with optimized performance of

forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time

control, guarantee the best overall performance,

ruggedness and reliability characteristics.

PRODUCT SUMMARY

Package

D-PAK (TO-252AA)

2 x 3 A

I_F(AV)

V_R

200 V

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

V_Fat I_F

1.0 V

_rrtyp.

See Recovery table

175 °C

T_Jmax.

Diode variation

Common cathode

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

MAX.

UNITS

Peak repetitive reverse voltage

200

Average rectified forward current per device

Non-repetitive peak surge current

Peak repetitive forward current per diode

Operating junction and storage temperatures

Total device, rated V_R, T_C= 146 °C

Rated V_R, square wave, 20 kHz, T_C= 146 °C

I_FSM

I_FM

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 3 A

200

1.0

0.96

1.2

1.13

I_F= 3 A, T_J= 125 °C

I_F= 6 A

Forward voltage

V_F

I_F= 6 A, T_J= 125 °C

V_R= V_Rrated

Reverse leakage current

I_R

μA

T_J= 125 °C, V_R= V_Rrated

V_R= 200 V

250

Junction capacitance

Series inductance

C_T

L_S

8.0

Measured lead to lead 5 mm from package body

Document Number: 94084

Revision: 13-Jan-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6 7 8

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