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MURD630CT

更新时间： 2024-11-21 14:55:07
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 43K
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MURD630CT 数据手册

 浏览型号MURD630CT的Datasheet PDF文件第2页浏览型号MURD630CT的Datasheet PDF文件第3页浏览型号MURD630CT的Datasheet PDF文件第4页 
®
MURD620CT – MURD660CT  
6.0A SURFACE MOUNT GLASS PASSIVATED DUAL SUPERFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
A
B
C
J
Ideally Suited for Automatic Assembly  
Low Profile Package  
High Surge Current Capability  
Low Power Loss, High Efficiency  
Super-Fast Recovery Time  
Ideally Suited for Use in High Frequency  
SMPS, Inverters, and As Free Wheeling Diodes  
D
E
PIN 1  
2
3
K
G
H
L
P
P
DPAK/TO-252  
Min  
Mechanical Data  
Dim  
Max  
6.70  
5.55  
2.50  
1.25  
6.20  
3.40  
0.90  
0.60  
1.60  
0.55  
A
B
C
D
E
G
H
J
6.05  
Case: DPAK/TO-252, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
5.05  
PIN 1  
PIN 3  
2.10  
Case, PIN 2  
1.05  
Polarity: See Diagram  
Weight: 0.3 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
5.48  
2.55  
0.55  
0.40  
K
L
0.95  
0.45  
P
2.30 Typical  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
MURD620CT MURD630CT MURD640CT MURD660CT Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
6.0  
3.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
75  
A
Forward Voltage per diode  
@IF = 3.0A  
VFM  
IRM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
85  
50  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJC  
80  
9.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on PCB with minimum recommended pad sizes per diode.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2019  
www.wontop.com  
1
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