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MURD620CTG PDF预览

MURD620CTG

更新时间: 2024-01-18 07:53:57
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关PC超快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 65K
描述
SWITCHMODE Power Rectifier

MURD620CTG 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.49
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:ULTRA FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:2
相数:1端子数量:2
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

MURD620CTG 数据手册

 浏览型号MURD620CTG的Datasheet PDF文件第2页浏览型号MURD620CTG的Datasheet PDF文件第3页浏览型号MURD620CTG的Datasheet PDF文件第4页 
MURD620CT  
Preferred Device  
SWITCHMODE  
Power Rectifier  
DPAK Surface Mount Package  
http://onsemi.com  
These state−of−the−art devices are designed for use in switching  
power supplies, inverters and as free wheeling diodes.  
ULTRAFAST RECTIFIER  
6.0 AMPERES, 200 VOLTS  
Features  
Pb−Free Packages are Available  
Ultrafast 35 Nanosecond Recovery Time  
Low Forward Voltage Drop  
Low Leakage  
1
4
3
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 0.4 Gram (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING  
DIAGRAM  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
4
Shipped 75 Units Per Plastic Tube  
YWW  
U
620T  
DPAK  
CASE 369C  
Available in 16 mm Tape and Reel, 2500 Units Per Reel,  
2
1
by Adding a “T4’’ Suffix to the Part Number  
3
MAXIMUM RATINGS  
Y
WW  
= Year  
= Work Week  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
200  
V
RRM  
RWM  
R
ORDERING INFORMATION  
Average Rectified Forward Current  
I
A
A
F(AV)  
Device  
Package  
Shipping  
(Rated V , T = 140°C)  
Per Diode  
Per Device  
3.0  
6.0  
R
C
MURD620CT  
DPAK  
75 Units/Rail  
75 Units/Rail  
Peak Repetitive Forward Current  
(Rated V , Square Wave,  
I
F
6.0  
MURD620CTG  
DPAK  
R
(Pb−Free)  
20 kHz, T = 145°C)  
Per Diode  
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, 60 Hz)  
I
50  
A
MURD620CTT4  
DPAK  
2500/Tape & Reel  
2500/Tape & Reel  
FSM  
MURD620CTT4G  
DPAK  
(Pb−Free)  
Operating Junction and Storage  
Temperature Range  
T , T  
−65 to +175  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 5  
MURD620CT/D  

MURD620CTG 替代型号

型号 品牌 替代类型 描述 数据表
NRVUD620CTT4G ONSEMI

完全替代

SWITCHMODE Power Rectifier
MSRD620CTT4G ONSEMI

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SWITCHMODE Soft Ultrafast Recovery Power Rectifier
MURD620CTT4G ONSEMI

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SWITCHMODE Power Rectifier

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