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MUR1660G

更新时间： 2024-11-18 12:57:39
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 732K
描述
16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes

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中文翻译

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MUR1660G 数据手册

 浏览型号MUR1660G的Datasheet PDF文件第2页 
MUR1620G thru MUR1660G  
MUR1620G/MUR1640G/MUR1660G  
Pb Free Plating Product  
16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes  
TO-220AC/TO-220C-2L  
Unit : inch (mm)  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Latest P/G technology with ultra fast recovery time  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS,Motor Control and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220-2L  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
Internal Configuration  
Base Backside  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.2 gram approximately  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
MUR1620G  
MUR1640G  
MUR1660G  
400  
280  
400  
VRRM  
VRMS  
VDC  
200  
140  
200  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward  
I(AV)  
16.0  
A
Rectified Current  
@TA =125℃  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
IFSM  
250  
A
Super Imposed on Rated Load(JEDEC Method)  
Peak Forward Voltage at 16.0A DC  
0.95  
VF  
IR  
1.50  
V
1.25  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TJ=25℃  
5.0  
50  
μA  
@TJ=125℃  
Maximum Reverse Recovery Time(Note1)  
Typical Junction Capacitance (Note2)  
Typical Thermal Resistance (Note3)  
TRR  
CJ  
nS  
pF  
35-50  
80  
16  
RθJA  
℃/W  
℃
-55 to + 150  
Operating and Storage Temperature Range  
TJ,TSTG  
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A  
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.  
3.Thermal resistance junction to ambient  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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