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MUR1660GD

更新时间： 2024-11-18 12:54:59
品牌 Logo 应用领域
THINKISEMI 整流二极管
页数 文件大小 规格书
2页 229K
描述
16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diode

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MUR1660GD 数据手册

 浏览型号MUR1660GD的Datasheet PDF文件第2页 
MUR1620GD thru MUR1660GD  
®
MUR1620GD thru MUR1660GD  
Pb Free Plating Product  
16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diode  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Environment(Inverters/Converters)  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
Car Audio Amplifier and Sound Device System  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: TO-220AB Heatsink  
.1(2.54)  
.1(2.54)  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Doubler  
Tandem Polarity  
Suffix "GD"  
Negative  
Common Anode  
Suffix "CA"  
Positive  
Common Cathode  
Suffix "CT"  
Weight: 2.2 gram approximately  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MUR1620GD MUR1640GD MUR1660GD  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
Current T  
C
=100oC  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
V
F
0.98  
1.3  
1.7  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25oC  
uA  
uA  
nS  
10.0  
250  
I
R
J
=125oC  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
pF  
oCW  
C
J
R
JC  
2.2  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to + 150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Rev.04/2014  
© 2006 Thinki Semiconductor Co.,Ltd.  
Page 1/2  
http://www.thinkisemi.com/  
12

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