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MUR1680D PDF预览

MUR1680D

更新时间: 2024-11-19 01:22:23
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 4396K
描述
16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier

MUR1680D 数据手册

 浏览型号MUR1680D的Datasheet PDF文件第2页 
MUR1680C  
®
16.0 Ampere Dual Common Cathode Ultra Fast Recovery Rectifier  
MUR1680C  
Pb Free Plating Product  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters/Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB  
.1(2.54)  
.1(2.54)  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.2 gram approximately  
Doubler  
Negative  
Positive  
Reverse Doubler  
Suffix "DR"  
Common Cathode Common Anode Tandem Polarity  
Suffix "C" Suffix "A" Suffix "D"  
Maximum Ratings and Electrical Characteristics  
Rating at 25 ambient temperature unless otherwise specified.  
Symbol  
Units  
Parameter  
Maximum Recurrent Peak Reverse Voltage  
MUR1680C  
VRRM  
VRMS  
VDC  
800  
560  
800  
16  
V
V
V
A
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
IF(AV)  
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave  
Superimposed on Rated Load (JEDEC method)  
IFSM  
VF  
IR  
125  
A
V
Maximum Instantaneous Forward Voltage (Note 1)  
@ 8 A  
1.8  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@ TA=25 ℃  
uA  
@ TA=125 ℃  
400  
40  
Maximum Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Typical Thermal Resistance  
Trr  
Cj  
nS  
pF  
50  
RθJC  
TJ  
1.5  
/W  
Operating Temperature Range  
Storage Temperature Range  
- 55 to + 150  
- 55 to + 150  
TSTG  
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04/2014  
© 2006 Thinki Semiconductor Co.,Ltd.  

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