MUR170 - MUR1100
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 700 - 1000V
CURRENT: 1.0 A
Features
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Low cost
Diffused junction
Low leakage
A
B
A
Low forward voltage drop
High crrent capability
Easily cleaned with Freon,Alcohol, lsopropand
and similar solvents
C
D
Mechanical Data
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Case: D O - 4 1 Molded Plastic
DO-41
Min
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Dim
A
Max
25.40
4.06
¾
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B
5.21
0.864
2.72
C
0.71
D
2.00
Marking: Type Number
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Unit
Symbol MUR170
MUR180
MUR190
MUR1100
Maximum recurrent peak reverse voltage
Maximum RMS voltage
700
800
560
800
V
V
V
VRRM
900
630
900
1000
700
490
VRMS
Maximum DC blocking voltage
700
VDC
1000
Maximum average forw ard rectified current
9.5mm lead length, @TA=75
A
1.0
IF(AV)
Peak forw ard surge current
10ms single half-sine-w ave
30.0
A
IFSM
superimposed on rated load
@TJ=125
Maximum instantaneous forw ard voltage
@ 1.0A
1.7
VF
IR
V
Maximum reverse current
@TA=25
10.0
A
at rated DC blocking voltage @TA=100
100.0
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
75
trr
ns
pF
/W
(Note2)
(Note3)
15
60
CJ
Rθ
JA
Operating junction temperature range
- 55 ----- + 150
TJ
Storage temperature range
- 55 ----- + 150
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MH and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
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