Datasheet > MUR170

MUR170

更新时间： 2024-11-18 04:14:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		功效
页数	文件大小	规格书
2页	59K
描述
HIGH EFFICIENCY RECTIFIER

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中文翻译

获取价格

数据手册

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MUR170 数据手册

GALAXY ELECTRICAL

MUR170 --- MUR1100

VOLTAGE RANGE: 700---1000 V

CURRENT: 1.0 A

HIGH EFFICIENCY RECTIFIER

FEATURES

Low cost

DO - 41

Diffused junction

Low leakage

Low forward voltage drop

High crrent capability

Easily cleaned with Freon,Alcohol, lsopropand

and similar solvents

MECHANICAL DATA

Case: JEDEC DO-41, molded plastic

Terminals: Axial leads,solderable per MIL-STD

-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.012 ounces, 0.34grams

Mounting: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.

MUR170 MUR180

MUR190 MUR1100 UNITS

Maximum recurrent peak reverse voltage

Maximum RMS voltage

700

490

700

800

560

800

V_RRM

V_RMS

V_DC

900

630

900

1000

700

Maximum DC blocking voltage

1000

Maximum average forw ard rectified current

9.5mm lead length, @T_A=75

1.0

I_F(AV)

Peak forw ard surge current

10ms single half-sine-w ave

30.0

I_FSM

superimposed on rated load

@T_J=125

Maximum instantaneous forw ard voltage

@ 1.0A

1.7

V_F

I_R

Maximum reverse current

@T_A=25

10.0

at rated DC blocking voltage @T_A=100

100.0

Maximum reverse recovery time

Typical junction capacitance

Typical thermal resistance

(Note1)

trr

(Note2)

(Note3)

C_J

R_θ

Operating junction temperature range

- 55 ----- + 150

T_J

Storage temperature range

T_STG

NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1.0MH and applied rev erse v oltage of 4.0V DC.

3. Thermal resistance from junction to ambient.

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0262021

中文翻译

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