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MUR180 PDF预览

MUR180

更新时间: 2024-11-18 10:41:55
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管
页数 文件大小 规格书
2页 78K
描述
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE: 800V CURRENT:1.0A

MUR180 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:800 V
最大反向恢复时间:0.075 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

MUR180 数据手册

 浏览型号MUR180的Datasheet PDF文件第2页 
MUR180  
ULTRAFAST EFFICIENT  
GLASS PASSIVATED RECTIFIER  
VOLTAGE: 800V  
CURRENT:1.0A  
DO-15  
FEATURE  
Ultrafast Nanosecond Recovery Times  
150°C Operating Junction Temperature  
Low Forward Voltage  
Low Leakage Current  
High Temperature Glass Passivated Junction  
MECHANICAL DATA  
Case: Epoxy, Molded  
Weight: 0.4 gram (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
solder heat resistance :265degreeC Max. for 10 Seconds,  
1/16 from case  
Polarity: Cathode Indicated by Polarity Band  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
SYMBOL  
MUR180  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
800  
640  
800  
1.0  
V
V
V
A
Maximum DC blocking Voltage  
If(av)  
Maximum Average Forward Rectified  
Peak Forward Surge Current 8.3ms single  
half sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
Ifsm  
35  
A
Vf  
V
1.75  
Current and 25°C  
Trr  
75  
10  
50  
25  
nS  
Maximum Reverse Recovery Time (Note 1)  
µA  
µA  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Typical Junction Capacitance  
Ta =25°C  
Ta =125°C  
(Note 2)  
Ir  
Cj  
pF  
Typical thermal resistance junction  
to ambient  
Storage and Operating Temperature Range  
50  
R
th(ja)  
°C/W  
°C  
(Note 3)  
Tstg, Tj  
-55 to +150  
Note:  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
Rev.A1  
www.gulfsemi.com  

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