Datasheet > MUR1660GD

MUR1660GD

更新时间： 2024-11-07 02:58:55

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
2页	321K
描述
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectiflers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MUR1660GD 数据手册

MUR1605 thru MUR1660

Pb Free Plating Product

16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers

Unit : inch (mm)

TO-220AB

Features

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

.139(3.55)

MIN

.054(1.39)

.045(1.15)

Low reverse leakage current

High surge current capability

Application

Automotive Environment|DC Motor Control

ꢀ

Plating Power Supply|UPS

Amplifier and Sound Device System etc..

.038(0.96)

.025(0.65)MAX

.019(0.50)

Mechanical Data

ꢀ

Case: Molded plastic TO-220AB Heatsink

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

.1(2.54)

Case

ꢀ

Polarity:As marked on diode body

Mounting position: Any

Weight: 2.03 grams

Doubler

Series Connection

Suffix "GD"

Negative

Common Anode

Suffix "CA"

Positive

Common Cathode

Suffix "CT"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT

Common Cathode Suffix "CT"

_MUR1660CAUNIT

MUR1605CA MUR1610CA MUR1620CA MUR1630CA MUR1640CA

SYMBOL

Common Anode Suffix "CA"

MUR1605GD MUR1610GD MUR1620GD MUR1630GD MUR1640GD MUR1660GD

Anode and Cathode Coexistence Suffix "GD"

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

100

200

140

200

300

210

300

400

280

400

600

420

600

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified

16.0

IF(AV)

Current T

=100^oC

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

FSM

175

150

Maximum Instantaneous Forward Voltage

@ 8.0 A

0.98

1.3

1.7

Maximum DC Reverse Current @T

At Rated DC Blocking Voltage @T

=25^oC

10.0

250

=125^oC

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

^oCW

2.2

Operating Junction and Storage

Temperature Range

^oC

-55 to + 150

T , TSTG

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com/

中文翻译

下载PDF

与MUR1660GD相关器件

型号	品牌	获取价格	描述	数据表
MUR1660N	LITTELFUSE	获取价格	16.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers
MUR1680A	THINKISEMI	获取价格	16.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier
MUR1680C	THINKISEMI	获取价格	16.0 Ampere Dual Common Cathode Ultra Fast Recovery Rectifier
MUR1680C	RECTRON	获取价格	Reverse Voltage Vr : 800 V;Forward Current Io : 16 A;Max Surge Current : 80 A;Forward Volt
MUR1680D	THINKISEMI	获取价格	16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier
MUR1680FCT	ISC	获取价格	Ultrafast Rectifier
MUR170	LGE	获取价格	Super Fast Rectifiers
MUR170	BL Galaxy Electrical	获取价格	HIGH EFFICIENCY RECTIFIER
MUR170	MOTOROLA	获取价格	Rectifier Diode, 1 Element, 1A, 700V V(RRM), Silicon, PLASTIC, CASE 59-04, 2 PIN
MUR170	SUNMATE	获取价格	Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)

与MUR1660GD相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

MUR1660GD

MUR1660GD 数据手册

与MUR1660GD相关器件

与MUR1660GD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MUR1660GD

MUR1660GD 数据手册

与MUR1660GD相关器件

与MUR1660GD相关文章

您还可以找

您在本页遇到什么问题？