是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 2 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 40 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP2N40E | MOTOROLA |
获取价格 |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM | |
MTP2N45 | MOTOROLA |
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Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTP2N45 | FAIRCHILD |
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N-Channel Power MOSFETs, 3.0 A, 450 V/500 V | |
MTP2N50 | FAIRCHILD |
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N-Channel Power MOSFETs, 3.0 A, 450 V/500 V | |
MTP2N50 | MOTOROLA |
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Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTP2N50 | NSC |
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TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-220AB | |
MTP2N50E | MOTOROLA |
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TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM | |
MTP2N55 | MOTOROLA |
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Power Field-Effect Transistor, 2A I(D), 550V, 6ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTP2N60 | MOTOROLA |
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TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS | |
MTP2N60E | MOTOROLA |
获取价格 |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |