生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.31 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 45 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (Abs) (ID): | 2 A |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 3.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 10 pF |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 6 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 46 ns | 最大开启时间(吨): | 30 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP2N45 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTP2N45 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V | |
MTP2N50 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V | |
MTP2N50 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTP2N50 | NSC |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-220AB | |
MTP2N50E | MOTOROLA |
获取价格 |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM | |
MTP2N55 | MOTOROLA |
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Power Field-Effect Transistor, 2A I(D), 550V, 6ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTP2N60 | MOTOROLA |
获取价格 |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS | |
MTP2N60E | MOTOROLA |
获取价格 |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS | |
MTP2N60E16 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal |