MTP2N60E

更新时间： 2024-11-23 22:45:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	222K
描述
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

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MTP2N60E 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.16
Is Samacsys：	N	雪崩能效等级（Eas）：	190 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V	最大漏极电流 (Abs) (ID)：	2 A
最大漏极电流 (ID)：	2 A	最大漏源导通电阻：	3.8 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	最大脉冲漏极电流 (IDM)：	9 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MTP2N60E 数据手册

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by MTP2N60E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

2.0 AMPERES

600 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 3.8 OHMS

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

600

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

600

Gate–to–Source Voltage — Continuous

— Single Pulse (t ≤ 50 µs)

±20

±40

Drain Current — Continuous

— Single Pulse (t ≤ 10 µs)

2.0

9.0

Adc

Total Power Dissipation

Derate above 25°C

0.4

Watts

W/°C

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

T , T

stg

–55 to 150

190

°C

= 50 Vdc, V = 10 Vdc, L = 95 mH, R = 25 Ω, Peak I = 2.0 Adc)

GS G L

Thermal Resistance — Junction to Case°

— Junction to Ambient°

2.5°

62.5°

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTP2N60E相关器件

型号	品牌	获取价格	描述	数据表
MTP2N60E16	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP2N60EA	MOTOROLA	获取价格	2A, 600V, 3.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2N60EA16A	MOTOROLA	获取价格	2A, 600V, 3.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2N60EAF	MOTOROLA	获取价格	暂无描述
MTP2N60EAJ	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP2N60EC	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP2N60ED1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP2N60EL	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP2N60EN	MOTOROLA	获取价格	2A, 600V, 3.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2N60ES	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal

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