MTP2N60EUA

更新时间： 2024-11-24 13:11:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管
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8页	222K
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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

2.0 AMPERES

600 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 3.8 OHMS

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

600

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

600

Gate–to–Source Voltage — Continuous

— Single Pulse (t ≤ 50 µs)

±20

±40

Drain Current — Continuous

— Single Pulse (t ≤ 10 µs)

2.0

9.0

Adc

Total Power Dissipation

Derate above 25°C

0.4

Watts

W/°C

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

T , T

stg

–55 to 150

190

°C

= 50 Vdc, V = 10 Vdc, L = 95 mH, R = 25 Ω, Peak I = 2.0 Adc)

GS G L

Thermal Resistance — Junction to Case°

— Junction to Ambient°

2.5°

62.5°

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTP2N60EUA相关器件

型号	品牌	获取价格	描述	数据表
MTP2N60EW	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP2N60EWC	MOTOROLA	获取价格	暂无描述
MTP2N80	NJSEMI	获取价格	Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220
MTP2N85	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 850V, 8ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP2N85	NJSEMI	获取价格	Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220
MTP2N90	NJSEMI	获取价格	XSTR N-CHL TMOS FET 2A 8OHM 900V TO-220 PKG
MTP2N90	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP2P4516	MOTOROLA	获取价格	2 A, 450 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2P45A	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 450V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP2P45A16A	MOTOROLA	获取价格	2 A, 450 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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