是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 80 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 2 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 52 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 75 W | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 6 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 80 ns |
最大开启时间(吨): | 52 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP2P50E_10 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 500 Volts | |
MTP2P50EG | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 500 Volts | |
MTP2P50L | MOTOROLA |
获取价格 |
2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP2P50N | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTP2P50S | MOTOROLA |
获取价格 |
2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP2P50U | MOTOROLA |
获取价格 |
暂无描述 | |
MTP2P50U2 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTP2P50UA | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTP2P50W | MOTOROLA |
获取价格 |
2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP2P50WC | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o |