生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 450 V |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 75 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP2P50 | MOTOROLA |
获取价格 |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM | |
MTP2P5016 | MOTOROLA |
获取价格 |
2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP2P50A | MOTOROLA |
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2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP2P50A16A | MOTOROLA |
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Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTP2P50AF | MOTOROLA |
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Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTP2P50AJ | MOTOROLA |
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2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP2P50D1 | MOTOROLA |
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Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o | |
MTP2P50E | MOTOROLA |
获取价格 |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM | |
MTP2P50E | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 500 Volts | |
MTP2P50E_10 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 500 Volts |