Datasheet > MTD5D0P03H8-0-T6-G

MTD5D0P03H8-0-T6-G

更新时间： 2024-11-22 01:21:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	511K
描述
P-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTD5D0P03H8-0-T6-G 数据手册

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Spec. No. : C965H8

Issued Date : 2017.10.27

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 9

P-Channel Enhancement Mode Power MOSFET

BVDSS

-30V

-90A

-22A

MTD5D0P03H8

ID@VGS=-10V, TC=25°C

ID@VGS=-10V, TA=25°C

3.9mΩ

5.6mΩ

VGS=-10V, ID=-25A

RDSON(TYP)

VGS=-6V, ID=-10A

Features

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Pb-free lead plating and Halogen-free package

Symbol

Outline

EDFN5×6

MTD5D0P03H8

Pin 1

G：Gate D：Drain S：Source

Ordering Information

Device

Package

DFN5×6

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / Tape & Reel

MTD5D0P03H8-0-T6-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTD5D0P03H8

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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与MTD5D0P03H8-0-T6-G相关器件

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MTD5N05T4	MOTOROLA	获取价格	5A, 50V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
MTD5N06	MOTOROLA	获取价格	Power Field Effect Transistors
MTD5N06-1	MOTOROLA	获取价格	Power Field Effect Transistors
MTD5N06RL	MOTOROLA	获取价格	暂无描述
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