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MTB75N03HDLT4 PDF预览

MTB75N03HDLT4

更新时间： 2024-02-16 06:37:57
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
12页 120K
描述
75A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

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MTB75N03HDLT4 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.16其他特性：LOGIC LEVEL COMPATIBLE
外壳连接：DRAIN配置：SINGLE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.007 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2.5 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

MTB75N03HDLT4 数据手册

 浏览型号MTB75N03HDLT4的Datasheet PDF文件第2页浏览型号MTB75N03HDLT4的Datasheet PDF文件第3页浏览型号MTB75N03HDLT4的Datasheet PDF文件第4页浏览型号MTB75N03HDLT4的Datasheet PDF文件第5页浏览型号MTB75N03HDLT4的Datasheet PDF文件第6页浏览型号MTB75N03HDLT4的Datasheet PDF文件第7页 
MTB75N03HDL  
Preferred Device  
Power MOSFET  
75 Amps, 25 Volts, Logic Level  
2
N–Channel D PAK  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. The energy efficient design also  
offers a drain–to–source diode with a fast recovery time. Designed for  
low voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
75 AMPERES  
25 VOLTS  
R
= 9 mΩ  
DS(on)  
• Avalanche Energy Specified  
• Source–to–Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
N–Channel  
D
• Diode is Characterized for Use in Bridge Circuits  
• I  
and V Specified at Elevated Temperature  
DS(on)  
DSS  
G
• Short Heatsink Tab Manufactured – Not sheared  
• Specially Designed Leadframe for Maximum Power Dissipation  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
4
Rating  
Drain–to–Source Voltage  
Drain–to–Gate Voltage (R  
Symbol  
Value  
25  
Unit  
Vdc  
Vdc  
2
D PAK  
V
DSS  
CASE 418B  
STYLE 2  
2
1
= 1.0 MΩ)  
V
DGR  
25  
GS  
3
Gate–to–Source Voltage  
– Continuous  
V
± 15  
± 20  
Vdc  
Vpk  
GS  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
– Non–Repetitive (t ≤ 10 ms)  
p
V
GSM  
Drain Current – Continuous  
Drain Current – Continuous @ 100°C  
Drain Current – Single Pulse (t ≤ 10 µs)  
I
I
75  
59  
225  
Adc  
Apk  
D
D
4
Drain  
p
I
DM  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C  
(Note 1.)  
P
D
125  
1.0  
2.5  
Watts  
W/°C  
Watts  
A
T75N03HDL  
YWW  
Operating and Storage Temperature  
Range  
– 55 to 150  
°C  
Single Pulse Drain–to–Source Avalanche  
E
280  
mJ  
1
Gate  
2
3
AS  
Energy – Starting T = 25°C  
Drain  
Source  
J
GS  
(V  
= 25 Vdc, V  
= 5.0 Vdc,  
DD  
I
L
= 75 Apk, L = 0.1 mH, R = 25 Ω)  
T75N03HDL  
= Device Code  
= Year  
= Work Week  
G
Y
WW  
Thermal Resistance  
°C/W  
°C  
– Junction to Case  
– Junction to Ambient  
– Junction to Ambient (Note 1.)  
R
R
R
1.0  
62.5  
50  
θJC  
θJA  
θJA  
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10  
seconds  
T
260  
L
Device  
Package  
Shipping  
50 Units/Rail  
2
D PAK  
MTB75N03HDL  
MTB75N03HDLT4  
1. When mounted with the minimum recommended pad size.  
2
D PAK  
800/Tape & Reel  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev.3  
MTB75N03HDL/D  
1234567...12

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