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MTB75N03HDLT4

更新时间： 2024-02-04 23:05:12
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
12页 120K
描述
75A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

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MTB75N03HDLT4 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.16其他特性：LOGIC LEVEL COMPATIBLE
外壳连接：DRAIN配置：SINGLE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.007 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2.5 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

MTB75N03HDLT4 数据手册

 浏览型号MTB75N03HDLT4的Datasheet PDF文件第2页浏览型号MTB75N03HDLT4的Datasheet PDF文件第3页浏览型号MTB75N03HDLT4的Datasheet PDF文件第4页浏览型号MTB75N03HDLT4的Datasheet PDF文件第6页浏览型号MTB75N03HDLT4的Datasheet PDF文件第7页浏览型号MTB75N03HDLT4的Datasheet PDF文件第8页 
MTB75N03HDL  
10000  
28  
24  
20  
16  
12  
8
7
6
5
4
3
2
T = 25°C  
J
I
D
= 75 A  
V
DD  
= 15 V  
QT  
Q2  
t
r
V
GS  
= 5 V  
1000  
V
GS  
Q1  
t
t
f
d(off)  
100  
10  
T = 25°C  
= 75 A  
J
t
d(on)  
I
D
1
0
4
0
V
DS  
Q3  
1
10  
R , GATE RESISTANCE (OHMS)  
100  
0
10  
20  
30  
40  
50  
60  
70  
Q , TOTAL GATE CHARGE (nC)  
T
G
Figure 8. Gate–To–Source and Drain–To–Source  
Voltage versus Total Charge  
Figure 9. Resistive Switching Time  
Variation versus Gate Resistance  
DRAIN–TO–SOURCE DIODE CHARACTERISTICS  
The switching characteristics of a MOSFET body diode  
are very important in systems using it as a freewheeling or  
commutating diode. Of particular interest are the reverse  
recovery characteristics which play a major role in  
determining switching losses, radiated noise, EMI and RFI.  
System switching losses are largely due to the nature of  
the body diode itself. The body diode is a minority carrier  
high di/dts. The diode’s negative di/dt during t is directly  
a
controlled by the device clearing the stored charge.  
However, the positive di/dt during t is an uncontrollable  
b
diode characteristic and is usually the culprit that induces  
current ringing. Therefore, when comparing diodes, the  
ratio of t /t serves as a good indicator of recovery  
b a  
abruptness and thus gives a comparative estimate of  
probable noise generated. A ratio of 1 is considered ideal and  
values less than 0.5 are considered snappy.  
device, therefore it has a finite reverse recovery time, t , due  
rr  
to the storage of minority carrier charge, Q , as shown in  
RR  
the typical reverse recovery wave form of Figure 12. It is this  
stored charge that, when cleared from the diode, passes  
through a potential and defines an energy loss. Obviously,  
repeatedly forcing the diode through reverse recovery  
further increases switching losses. Therefore, one would  
Compared to ON Semiconductor standard cell density  
low voltage MOSFETs, high cell density MOSFET diodes  
are faster (shorter t ), have less stored charge and a softer  
rr  
reverse recovery characteristic. The softness advantage of  
the high cell density diode means they can be forced through  
reverse recovery at a higher di/dt than a standard cell  
MOSFET diode without increasing the current ringing or the  
noise generated. In addition, power dissipation incurred  
from switching the diode will be less due to the shorter  
recovery time and lower switching losses.  
like a diode with short t and low Q  
minimize these losses.  
specifications to  
rr  
RR  
The abruptness of diode reverse recovery effects the  
amount of radiated noise, voltage spikes, and current  
ringing. The mechanisms at work are finite irremovable  
circuit parasitic inductances and capacitances acted upon by  
75  
T = 25°C  
J
V
GS  
= 0 V  
60  
45  
30  
15  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
V , SOURCE-TO-DRAIN VOLTAGE (VOLTS)  
SD  
Figure 10. Diode Forward Voltage versus Current  
http://onsemi.com  
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