Datasheet > MTB75N05HDT4G

MTB75N05HDT4G

更新时间： 2024-02-27 14:53:40

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安森美 - ONSEMI		/
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8页	115K
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MTB75N05HDT4G 数据手册

MTB75N05HD

Preferred Device

Power MOSFET

75 Amps, 50 Volts

N–Channel D PAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers a drain–to–source diode with a fast recovery time. Designed for

low voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

http://onsemi.com

75 AMPERES

50 VOLTS

= 9.5 mΩ

DS(on)

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

N–Channel

• Diode is Characterized for Use in Bridge Circuits

• I

and V Specified at Elevated Temperature

DSS

DS(on)

• Short Heatsink Tab Manufactured – Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage (R

Symbol

Value

Unit

DSS

Volts

D PAK

CASE 418B

STYLE 2

= 1.0 MΩ)

DGR

Gate–to–Source Voltage – Continuous

±20

Drain Current – Continuous

Drain Current – Continuous @ 100°C

Drain Current – Single Pulse (t ≤ 10 µs)

225

Amps

MARKING DIAGRAM

& PIN ASSIGNMENT

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ T = 25°C

(minimum footprint, FR–4 board)

125

1.0

2.5

Watts

W/°C

Watts

Drain

MTB75N05HD

YWW

Operating and Storage Temperature

Range

T , T

J stg

– 55 to

150

°C

Single Pulse Drain–to–Source Avalanche

500

Energy – Starting T = 25°C

= 25 V, V

= 10 V, Peak

= 75 A, L = 0.177 mH, R = 25 Ω)

Gate

Drain

Source

Thermal Resistance

°C/W

°C

MTB75N05HD = Device Code

– Junction to Case

1.0

62.5

= Year

θJC

θJA

– Junction to Ambient

– Junction to Ambient (minimum foot-

print, FR–4 board)

= Work Week

ORDERING INFORMATION

Maximum Temperature for Soldering

Purposes, 1/8″ from case for 10

seconds

260

Device

Package

Shipping

50 Units/Rail

D PAK

MTB75N05HD

MTB75N05HDT4

D PAK

800/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

November, 2000 – Rev.4

MTB75N05HD/D

12 3 4 5 6 7 8

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