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MTB75N05HDT4 PDF预览

MTB75N05HDT4

更新时间： 2024-02-01 22:48:34
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体管
页数 文件大小 规格书
8页 179K
描述
Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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MTB75N05HDT4 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.14外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：50 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.0095 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTB75N05HDT4 数据手册

 浏览型号MTB75N05HDT4的Datasheet PDF文件第2页浏览型号MTB75N05HDT4的Datasheet PDF文件第3页浏览型号MTB75N05HDT4的Datasheet PDF文件第4页浏览型号MTB75N05HDT4的Datasheet PDF文件第5页浏览型号MTB75N05HDT4的Datasheet PDF文件第6页浏览型号MTB75N05HDT4的Datasheet PDF文件第7页 
Order this document  
by MTB75N05HD/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
75 AMPERES  
50 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
2
The D PAK package has the capability of housing a larger die  
R
= 9.5 mΩ  
than any existing surface mount package which allows it to be used  
in applications that require the use of surface mount components  
DS(on)  
with higher power and lower R  
capabilities. This advanced  
DS(on)  
high–cell density HDTMOS power FET is designed to withstand  
high energy in the avalanche and commutation modes. This new  
energy efficient design also offers a drain–to–source diode with a  
fast recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
D
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
G
CASE 418B–03, Style 2  
2
D PAK  
S
•
•
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
Short Heatsink Tab Manufactured — Not Sheared  
Specially Designed Leadframe for Maximum Power Dissipation  
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4  
Suffix to Part Number  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
50  
Unit  
Drain–to–Source Voltage  
V
DSS  
Volts  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
50  
Gate–to–Source Voltage — Continuous  
V
GS  
± 20  
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
75  
65  
225  
Amps  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C (minimum footprint, FR–4 board)  
P
D
125  
1.0  
2.5  
Watts  
W/°C  
Watts  
A
Operating and Storage Temperature Range  
T , T  
stg  
– 55 to 150  
500  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 V, V  
= 10 V, Peak I = 75 A, L = 0.177 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient (minimum footprint, FR–4 board)  
R
θJC  
R
θJA  
R
θJA  
1.0  
62.5  
50  
°C/W  
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Thisdatasheetpermitsthedesignofmostcircuitsentirelyfromtheinformationpresented.SOALimitcurves — representingboundariesondevicecharacteristics — are  
given to facilitate “worst case” design.  
E–FET and HDTMOS are trademarks of Motorola Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1999  
12345678

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