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STB80NE03L-06 PDF预览

STB80NE03L-06

更新时间: 2024-01-21 13:55:58
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 297K
描述
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩ POWER MOSFET

STB80NE03L-06 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:ROHS COMPLIANT, TO-263, D2PAK-3
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.31
Is Samacsys:N雪崩能效等级(Eas):600 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB80NE03L-06 数据手册

 浏览型号STB80NE03L-06的Datasheet PDF文件第2页浏览型号STB80NE03L-06的Datasheet PDF文件第3页浏览型号STB80NE03L-06的Datasheet PDF文件第4页浏览型号STB80NE03L-06的Datasheet PDF文件第5页浏览型号STB80NE03L-06的Datasheet PDF文件第6页浏览型号STB80NE03L-06的Datasheet PDF文件第7页 
STB80NE03L-06  
STB80NE03L-06-1  
2
2
N-CHANNEL 30V - 0.005- 80A D PAK / I PAK  
STripFET™ POWER MOSFET  
TYPE  
V
R
I
D
DSS  
DS(on)  
STB80NE03L-06  
STB80NE03L-06-1  
30 V  
30 V  
< 0.006 Ω  
< 0.006 Ω  
80 A  
80 A  
TYPICAL R (on) = 0.005 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
LOW GATE CHARGE 100°C  
100% AVALANCHE TESTED  
3
3
1
2
1
DESCRIPTION  
2
2
I PAK  
D PAK  
This Power MOSFET is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting transis-  
tor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL,AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
30  
DGR  
GS  
V
Gate- source Voltage  
± 20  
80  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
60  
A
D
C
I
( )  
Drain Current (pulsed)  
320  
150  
1
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
7
T
stg  
– 55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area  
(1) I 804A, di/dt 300A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
February 2003  
1/9  

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